Inventor
TAHARA YOSHIFUMI
JP22 patents
⚠️ This page may combine multiple inventors who share the name “TAHARA YOSHIFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
20 patentsUS5571366ANov 5, 1996
Plasma processing apparatus
TOKYO ELECTRON LTD502 citations99
US4931135AJun 5, 1990
Etching method and etching apparatus
TOKYO ELECTRON LTD449 citations99
US5382311AJan 17, 1995
Stage having electrostatic chuck and plasma processing apparatus using same
TOKYO ELECTRON LTD1,031 citations98
US6110287AAug 29, 2000
Plasma processing method and plasma processing apparatus
TOKYO ELECTRON LTD397 citations97
US5356515AOct 18, 1994
Dry etching method
TOKYO ELECTRON LTD139 citations97
US6423242B1Jul 23, 2002
Etching method
TOKYO ELECTRON LTD58 citations96
US5698070ADec 16, 1997
Method of etching film formed on semiconductor wafer
TOKYO ELECTRON LTD56 citations96
US5270266ADec 14, 1993
Method of adjusting the temperature of a semiconductor wafer
TOKYO ELECTRON LTD75 citations96
US5203958AApr 20, 1993
Processing method and apparatus
TOKYO ELECTRON LTD55 citations96
US4978412ADec 18, 1990
Plasma processing device
TOKYO ELECTRON LTD61 citations96
US4963713AOct 16, 1990
Cooling of a plasma electrode system for an etching apparatus
TOKYO ELECTRON LTD55 citations96
US5494522AFeb 27, 1996
Plasma process system and method
TOKYO ELECTRON LTD90 citations95
US5411631AMay 2, 1995
Dry etching method
TOKYO ELECTRON LTD66 citations95
US5705081AJan 6, 1998
Etching method
TOKYO ELECTRON LTD24 citations92
US5411624AMay 2, 1995
Magnetron plasma processing apparatus
TOKYO ELECTRON LTD54 citations92
US5302236AApr 12, 1994
Method of etching object to be processed including oxide or nitride portion
TOKYO ELECTRON LTD50 citations92
US5155331AOct 13, 1992
Method for cooling a plasma electrode system for an etching apparatus
TOKYO ELECTRON LTD23 citations92
US5089083AFeb 18, 1992
Plasma etching method
TOKYO ELECTRON LTD53 citations92
US5164034ANov 17, 1992
Apparatus and method for processing substrate
TOKYO ELECTRON LTD15 citations74
US5858258AJan 12, 1999
Plasma processing method
TOKYO ELECTRON LTD4 citations63