Inventor
DOBUZINSKY DAVID MARK
US8 patents
Patents
8 patentsUS5536360AJul 16, 1996
Method for etching boron nitride
IBM247 citations98
US6046487AApr 4, 2000
Shallow trench isolation with oxide-nitride/oxynitride liner
IBM169 citations96
US5876788AMar 2, 1999
High dielectric TiO2 -SiN composite films for memory applications
IBM97 citations96
US5763315AJun 9, 1998
Shallow trench isolation with oxide-nitride/oxynitride liner
IBM199 citations96
US5899724AMay 4, 1999
Method for fabricating a titanium resistor
IBM26 citations89
US6518151B1Feb 11, 2003
Dual layer hard mask for eDRAM gate etch process
IBM14 citations82
US6014310AJan 11, 2000
High dielectric TiO2 -SiN composite films for memory applications
IBM14 citations81
US5885899AMar 23, 1999
Method of chemically mechanically polishing an electronic component using a non-selective ammonium hydroxide slurry
IBM5 citations58