Inventor
SHEU YAU-KAE
TW17 patents
⚠️ This page may combine multiple inventors who share the name “SHEU YAU-KAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED SEMICONDUCTOR CORP
11 patentsUS5915171AJun 22, 1999
Process of fabricating an antifuse structure
UNITED SEMICONDUCTOR CORP24 citations92
US5882972AMar 16, 1999
Method of fabricating a buried bit line
UNITED SEMICONDUCTOR CORP17 citations92
US5872036AFeb 16, 1999
Method of manufacturing a split-gate flash memory cell
UNITED SEMICONDUCTOR CORP26 citations92
US6066572AMay 23, 2000
Method of removing carbon contamination on semiconductor substrate
UNITED SEMICONDUCTOR CORP29 citations86
US6051469AApr 18, 2000
Method of fabricating bit line
UNITED SEMICONDUCTOR CORP18 citations84
US6180459B1Jan 30, 2001
Method for fabricating a flash memory with shallow trench isolation
UNITED SEMICONDUCTOR CORP7 citations73
US6008522ADec 28, 1999
Structure of buried bit line
UNITED SEMICONDUCTOR CORP14 citations73
US5907172AMay 25, 1999
Split-gate flash memory cell structure
UNITED SEMICONDUCTOR CORP6 citations73
US5856224AJan 5, 1999
Method of fabricating split-gate flash memory
UNITED SEMICONDUCTOR CORP12 citations73
US6157057ADec 5, 2000
Flash memory cell
UNITED SEMICONDUCTOR CORP2 citations63
US5994185ANov 30, 1999
Method of fabricating flash memory cell
UNITED SEMICONDUCTOR CORP2 citations63
UNITED MICROELECTRONICS CORP
4 patentsUS5422292AJun 6, 1995
Process for fabricating split gate flash EEPROM memory
UNITED MICROELECTRONICS CORP26 citations92
US5646059AJul 8, 1997
Process for fabricating non-volatile memory cells having improved voltage coupling ratio by utilizing liquid phase
UNITED MICROELECTRONICS CORP13 citations74
US8815703B2Aug 26, 2014
Fabricating method of shallow trench isolation structure
UNITED MICROELECTRONICS CORP4 citations68
US6242307B1Jun 5, 2001
Method of fabricating flash memory
UNITED MICROELECTRONICS CORP6 citations62