Inventor
GAU JING-HORNG
TW30 patents
⚠️ This page may combine multiple inventors who share the name “GAU JING-HORNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
22 patentsUS6949440B2Sep 27, 2005
Method of forming a varactor
UNITED MICROELECTRONICS CORP23 citations92
US6943399B1Sep 13, 2005
Varactor and differential varactor
UNITED MICROELECTRONICS CORP23 citations92
US6440791B1Aug 27, 2002
Self aligned bit-line contact opening and node contact opening fabrication process
UNITED MICROELECTRONICS CORP21 citations92
US6245625B1Jun 12, 2001
Fabrication method of a self-aligned contact window
UNITED MICROELECTRONICS CORP20 citations92
US6977198B2Dec 20, 2005
Metal-insulator-metal (MIM) capacitor and fabrication method for making the same
UNITED MICROELECTRONICS CORP19 citations84
US6882029B1Apr 19, 2005
Junction varactor with high Q factor and wide tuning range
UNITED MICROELECTRONICS CORP16 citations84
US6329255B1Dec 11, 2001
Method of making self-aligned bit-lines
UNITED MICROELECTRONICS CORP15 citations84
US6255168B1Jul 3, 2001
Method for manufacturing bit line and bit line contact
UNITED MICROELECTRONICS CORP15 citations84
US7042326B2May 9, 2006
Symmetrical inductor
UNITED MICROELECTRONICS CORP7 citations74
US6881638B1Apr 19, 2005
Method of fabricating a bipolar junction transistor
UNITED MICROELECTRONICS CORP5 citations74
US6423641B1Jul 23, 2002
Method of making self-aligned bit-lines
UNITED MICROELECTRONICS CORP11 citations74
US6190962B1Feb 20, 2001
Method of fabricating capacitor
UNITED MICROELECTRONICS CORP7 citations74
US6670695B1Dec 30, 2003
Method of manufacturing anti-reflection layer
UNITED MICROELECTRONICS CORP12 citations72
US7157766B2Jan 2, 2007
Variable capactor structure and method of manufacture
UNITED MICROELECTRONICS CORP3 citations63
US7071070B2Jul 4, 2006
Method of fabricating capacitor
UNITED MICROELECTRONICS CORP4 citations63
US6905935B1Jun 14, 2005
Method for fabricating a vertical bipolar junction transistor
UNITED MICROELECTRONICS CORP2 citations63
US6423597B1Jul 23, 2002
Structure of a DRAM and a manufacturing process thereof
UNITED MICROELECTRONICS CORP4 citations63
US6884689B2Apr 26, 2005
Fabrication of self-aligned bipolar transistor
UNITED MICROELECTRONICS CORP5 citations62
US6255191B1Jul 3, 2001
Method of fabricating an isolation structure in an integrated circuit
UNITED MICROELECTRONICS CORP6 citations62
US6664201B2Dec 16, 2003
Method of manufacturing anti-reflection layer
UNITED MICROELECTRONICS CORP2 citations61
US6949438B2Sep 27, 2005
Method of fabricating a bipolar junction transistor
UNITED MICROELECTRONICS CORP0 citations52
US6545307B2Apr 8, 2003
Structure of a DRAM and a manufacturing process therefor
UNITED MICROELECTRONICS CORP0 citations52
UNITED SEMICONDUCTOR CORP
8 patentsUS6040232AMar 21, 2000
Method of manufacturing shallow trench isolation
UNITED SEMICONDUCTOR CORP48 citations92
US6221736B1Apr 24, 2001
Fabrication method for a shallow trench isolation structure
UNITED SEMICONDUCTOR CORP19 citations84
US6156664ADec 5, 2000
Method of manufacturing liner insulating layer
UNITED SEMICONDUCTOR CORP16 citations84
US6071804AJun 6, 2000
Method of fabricating bit lines by damascene
UNITED SEMICONDUCTOR CORP16 citations84
US6187649B1Feb 13, 2001
Shallow trench isolation process
UNITED SEMICONDUCTOR CORP13 citations74
US6057196AMay 2, 2000
Self-aligned contact process comprising a two-layer spacer wherein one layer is at a level lower than the top surface of the gate structure
UNITED SEMICONDUCTOR CORP4 citations63
US6204108B1Mar 20, 2001
Method of fabricating a dynamic random access memory capacitor
UNITED SEMICONDUCTOR CORP6 citations62
US6187629B1Feb 13, 2001
Method of fabricating a DRAM capacitor
UNITED SEMICONDUCTOR CORP2 citations62