P

Inventor

SCHEUERLEIN ROY EDWIN

US24 patents
⚠️ This page may combine multiple inventors who share the name “SCHEUERLEIN ROY EDWIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

19 patents
US6335890B1Jan 1, 2002

Segmented write line architecture for writing magnetic random access memories

IBM202 citations99
US6130835AOct 10, 2000

Voltage biasing for magnetic RAM with magnetic tunnel memory cells

IBM186 citations99
US6097625AAug 1, 2000

Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes

IBM157 citations99
US5991193ANov 23, 1999

Voltage biasing for magnetic ram with magnetic tunnel memory cells

IBM305 citations99
US5793697AAug 11, 1998

Read circuit for magnetic memory array using magnetic tunnel junction devices

IBM332 citations99
US6331944B1Dec 18, 2001

Magnetic random access memory using a series tunnel element select mechanism

IBM160 citations98
US6269018B1Jul 31, 2001

Magnetic random access memory using current through MTJ write mechanism

IBM172 citations98
US6269040B1Jul 31, 2001

Interconnection network for connecting memory cells to sense amplifiers

IBM93 citations98
US6191989B1Feb 20, 2001

Current sensing amplifier

IBM193 citations98
US6005800ADec 21, 1999

Magnetic memory array with paired asymmetric memory cells for improved write margin

IBM241 citations98
US5640343AJun 17, 1997

Magnetic memory array using magnetic tunnel junction devices in the memory cells

IBM1,220 citations98
US6404671B1Jun 11, 2002

Data-dependent field compensation for writing magnetic random access memories

IBM55 citations96
US6180444B1Jan 30, 2001

Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same

IBM69 citations96
US6351023B1Feb 26, 2002

Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same

IBM28 citations93
US6562634B2May 13, 2003

Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method of forming the same

IBM26 citations92
US6515897B1Feb 4, 2003

Magnetic random access memory using a non-linear memory element select mechanism

IBM32 citations92
US6430660B1Aug 6, 2002

Unified memory hard disk drive system

IBM32 citations92
US6816431B1Nov 9, 2004

Magnetic random access memory using memory cells with rotated magnetic storage elements

IBM9 citations74
US6975555B2Dec 13, 2005

Magnetic random access memory using memory cells with rotated magnetic storage elements

IBM2 citations63

SANDISK 3D LLC

2 patents

(unassigned)

1 patent

SAMACHISA GEORGE

1 patent

INFINEON TECHNOLOGIES CORP

1 patent