Inventor

BYUN JEONG SOO

US54 patents

⚠️ This page may combine multiple inventors who share the name “BYUN JEONG SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BYUN JEONG SOO

APPLIED MATERIALS INC

Formation of boride barrier layers using chemisorption techniques

Method and apparatus for depositing tungsten after surface treatment to improve film characteristics

In-situ-etch-assisted HDP deposition using SiF4 and hydrogen

Formation of boride barrier layers using chemisorption techniques

Formation of boride barrier layers using chemisorption techniques

Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques

Formation of composite tungsten films

Methods for depositing tungsten layers employing atomic layer deposition techniques

Method for forming tungsten materials during vapor deposition processes

Formation of boride barrier layers using chemisorption techniques

Formation of boride barrier layers using chemisorption techniques

Method for forming tungsten materials during vapor deposition processes

Methods for depositing tungsten layers employing atomic layer deposition techniques

Method for forming tungsten materials during vapor deposition processes

Method and system for controlling the presence of fluorine in refractory metal layers

Atomic layer deposition apparatus

Method and system for controlling the presence of fluorine in refractory metal layers

Method and system for controlling the presence of fluorine in refractory metal layers

System and method to form a composite film stack utilizing sequential deposition techniques

Formation of composite tungsten films

Method for forming tungsten materials during vapor deposition processes

Methods for depositing tungsten after surface treatment

Method and apparatus for depositing tungsten after surface treatment to improve film characteristics

Formation of composite tungsten films

Gap filling with a composite layer

Atomic layer deposition apparatus

Atomic layer deposition apparatus

Atomic layer deposition apparatus

In-situ-etch-assisted HDP deposition

In-situ-etch-assisted HDP deposition using SiF4

Atomic layer deposition apparatus

LG SEMICON CO LTD

Method for forming a semiconductor device electrode which also serves as a diffusion barrier

Electrode passivation layer of semiconductor device and method for forming the same

Method for forming a silicide layer in a semiconductor device

Method for forming platinum silicide plugs

Method for fabricating semiconductor device

Method for the formation of polycide gate in semiconductor device

Method for forming epitaxial Co self-align silicide for semiconductor device

Method of forming electrode of semiconductor device

Method for forming refractory metal nitride film

CYPRESS SEMICONDUCTOR CORP

Oxide formation in a plasma process

Radical oxidation process for fabricating a nonvolatile charge trap memory device

Oxide formation in a plasma process

Oxide formation in a plasma process

BYUN JEONG SOO

Oxide formation in a plasma process

Oxide formation in a plasma process

Longitude Flash Memory Solutions Ltd

Radical oxidation process for fabricating a nonvolatile charge trap memory device

HYUNDAI ELECTRONICS IND

Method for fabricating semiconductor device having improved step coverage and low resistivity contacts

CHIN BARRY L

Atomic layer deposition apparatus

POLISHCHUK IGOR

Methods for fabricating semiconductor memory with process induced strain