Inventor
CHU JACK OON
US61 patents
Patents
50 patentsUS7678638B2Mar 16, 2010
Metal gated ultra short MOSFET devices
IBM121 citations99
US7608496B2Oct 27, 2009
High speed GE channel heterostructures for field effect devices
IBM123 citations99
US7494861B2Feb 24, 2009
Method for metal gated ultra short MOSFET devices
IBM121 citations99
US7348629B2Mar 25, 2008
Metal gated ultra short MOSFET devices
IBM124 citations99
US7145167B1Dec 5, 2006
High speed Ge channel heterostructures for field effect devices
IBM121 citations99
US6909186B2Jun 21, 2005
High performance FET devices and methods therefor
IBM88 citations99
US6059895AMay 9, 2000
Strained Si/SiGe layers on insulator
IBM397 citations99
US6013134AJan 11, 2000
Advance integrated chemical vapor deposition (AICVD) for semiconductor devices
IBM155 citations99
US5906951AMay 25, 1999
Strained Si/SiGe layers on insulator
IBM304 citations99
US7244958B2Jul 17, 2007
Integration of strained Ge into advanced CMOS technology
IBM82 citations98
US6963078B2Nov 8, 2005
Dual strain-state SiGe layers for microelectronics
IBM68 citations98
US6943407B2Sep 13, 2005
Low leakage heterojunction vertical transistors and high performance devices thereof
IBM494 citations98
US6774010B2Aug 10, 2004
Transferable device-containing layer for silicon-on-insulator applications
IBM376 citations98
US6524935B1Feb 25, 2003
Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique
IBM250 citations98
US6425951B1Jul 30, 2002
Advance integrated chemical vapor deposition (AICVD) for semiconductor
IBM85 citations98
US6350993B1Feb 26, 2002
High speed composite p-channel Si/SiGe heterostructure for field effect devices
IBM404 citations98
US6251751B1Jun 26, 2001
Bulk and strained silicon on insulator using local selective oxidation
IBM239 citations98
US6096590AAug 1, 2000
Scalable MOS field effect transistor
IBM184 citations98
US5963817AOct 5, 1999
Bulk and strained silicon on insulator using local selective oxidation
IBM251 citations98
US7906413B2Mar 15, 2011
Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD
IBM137 citations97
US7205604B2Apr 17, 2007
Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
IBM98 citations97
US6475072B1Nov 5, 2002
Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP)
IBM86 citations97
US6927414B2Aug 9, 2005
High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
IBM45 citations96
US5780327AJul 14, 1998
Vertical double-gate field effect transistor
IBM68 citations96
US5689127ANov 18, 1997
Vertical double-gate field effect transistor
IBM71 citations96
US6890835B1May 10, 2005
Layer transfer of low defect SiGe using an etch-back process
IBM53 citations95
US6858502B2Feb 22, 2005
High speed composite p-channel Si/SiGe heterostructure for field effect devices
IBM39 citations95
US6723621B1Apr 20, 2004
Abrupt delta-like doping in Si and SiGe films by UHV-CVD
IBM45 citations95
US7547930B2Jun 16, 2009
High performance FET devices and methods thereof
IBM10 citations93
US7510916B2Mar 31, 2009
High performance FET devices and methods thereof
IBM14 citations93
US7091095B2Aug 15, 2006
Dual strain-state SiGe layers for microelectronics
IBM22 citations93
US7183576B2Feb 27, 2007
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
IBM14 citations92
US7038277B2May 2, 2006
Transferable device-containing layer for silicon-on-insulator applications
IBM22 citations92
US6750119B2Jun 15, 2004
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
IBM22 citations92
US6426265B1Jul 30, 2002
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM25 citations92
US7083998B2Aug 1, 2006
Si/SiGe optoelectronic integrated circuits
IBM20 citations91
US6784466B2Aug 31, 2004
Si/SiGe optoelectronic integrated circuits
IBM34 citations91
US7569442B2Aug 4, 2009
High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof
IBM8 citations84
US7453113B2Nov 18, 2008
Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
IBM14 citations84
US7387925B2Jun 17, 2008
Integration of strained Ge into advanced CMOS technology
IBM12 citations84
US7563657B2Jul 21, 2009
High performance FET devices and methods thereof
IBM6 citations74
US7411214B2Aug 12, 2008
High performance FET devices and methods thereof
IBM3 citations74
US7358122B2Apr 15, 2008
High performance FET devices and methods thereof
IBM5 citations74
US6908866B2Jun 21, 2005
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
IBM6 citations73
US6870232B1Mar 22, 2005
Scalable MOS field effect transistor
IBM9 citations73
US7067855B2Jun 27, 2006
Semiconductor structure having an abrupt doping profile
IBM10 citations72
US6815802B2Nov 9, 2004
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM5 citations71
US9947755B2Apr 17, 2018
III-V MOSFET with self-aligned diffusion barrier
IBM1 citations63
US7790538B2Sep 7, 2010
Integration of strained Ge into advanced CMOS technology
IBM4 citations63
US7902012B2Mar 8, 2011
High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
IBM3 citations62
Showing the top 50 of 61 patents by PatentIndex Score.