P

Inventor

WINSTEAD BRIAN A

US49 patents
⚠️ This page may combine multiple inventors who share the name “WINSTEAD BRIAN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FREESCALE SEMICONDUCTOR INC

23 patents
US7435639B2Oct 14, 2008

Dual surface SOI by lateral epitaxial overgrowth

FREESCALE SEMICONDUCTOR INC34 citations92
US7166897B2Jan 23, 2007

Method and apparatus for performance enhancement in an asymmetrical semiconductor device

FREESCALE SEMICONDUCTOR INC19 citations92
US7821055B2Oct 26, 2010

Stressed semiconductor device and method for making

FREESCALE SEMICONDUCTOR INC37 citations91
US7811886B2Oct 12, 2010

Split-gate thin film storage NVM cell with reduced load-up/trap-up effects

FREESCALE SEMICONDUCTOR INC33 citations91
US7833852B2Nov 16, 2010

Source/drain stressors formed using in-situ epitaxial growth

FREESCALE SEMICONDUCTOR INC8 citations84
US7414877B2Aug 19, 2008

Electronic device including a static-random-access memory cell and a process of forming the electronic device

FREESCALE SEMICONDUCTOR INC16 citations84
US8035156B2Oct 11, 2011

Split-gate non-volatile memory cell and method

FREESCALE SEMICONDUCTOR INC8 citations83
US7985649B1Jul 26, 2011

Method of making a semiconductor structure useful in making a split gate non-volatile memory cell

FREESCALE SEMICONDUCTOR INC18 citations83
US7420202B2Sep 2, 2008

Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device

FREESCALE SEMICONDUCTOR INC13 citations83
US7572706B2Aug 11, 2009

Source/drain stressor and method therefor

FREESCALE SEMICONDUCTOR INC7 citations74
US9111867B2Aug 18, 2015

Split gate nanocrystal memory integration

FREESCALE SEMICONDUCTOR INC3 citations63
US8048738B1Nov 1, 2011

Method for forming a split gate device

FREESCALE SEMICONDUCTOR INC3 citations63
US7960243B2Jun 14, 2011

Method of forming a semiconductor device featuring a gate stressor and semiconductor device

FREESCALE SEMICONDUCTOR INC4 citations63
US7957190B2Jun 7, 2011

Memory having P-type split gate memory cells and method of operation

FREESCALE SEMICONDUCTOR INC3 citations63
US7923328B2Apr 12, 2011

Split gate non-volatile memory cell with improved endurance and method therefor

FREESCALE SEMICONDUCTOR INC2 citations63
US7799644B2Sep 21, 2010

Transistor with asymmetry for data storage circuitry

FREESCALE SEMICONDUCTOR INC3 citations63
US7608898B2Oct 27, 2009

One transistor DRAM cell structure

FREESCALE SEMICONDUCTOR INC2 citations63
US7488635B2Feb 10, 2009

Semiconductor structure with reduced gate doping and methods for forming thereof

FREESCALE SEMICONDUCTOR INC3 citations63
US7479422B2Jan 20, 2009

Semiconductor device with stressors and method therefor

FREESCALE SEMICONDUCTOR INC2 citations63
US7714318B2May 11, 2010

Electronic device including a transistor structure having an active region adjacent to a stressor layer

FREESCALE SEMICONDUCTOR INC5 citations62
US7468313B2Dec 23, 2008

Engineering strain in thick strained-SOI substrates

FREESCALE SEMICONDUCTOR INC2 citations62
US7960267B2Jun 14, 2011

Method for making a stressed non-volatile memory device

FREESCALE SEMICONDUCTOR INC2 citations61
US7923769B2Apr 12, 2011

Split gate non-volatile memory cell with improved endurance and method therefor

FREESCALE SEMICONDUCTOR INC1 citations52

WINSTEAD BRIAN A

10 patents

LOIKO KONSTANTIN V

6 patents

WHITE TED R

2 patents

KANG SUNG-TAEG

2 patents

HONG CHEONG M

2 patents

BURNETT JAMES D

1 patent

ZHANG DA

1 patent

GASQUET HORACIO P

1 patent

SHEN JINMIAO J

1 patent