Inventor
WINSTEAD BRIAN A
US49 patents
⚠️ This page may combine multiple inventors who share the name “WINSTEAD BRIAN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
23 patentsUS7435639B2Oct 14, 2008
Dual surface SOI by lateral epitaxial overgrowth
FREESCALE SEMICONDUCTOR INC34 citations92
US7166897B2Jan 23, 2007
Method and apparatus for performance enhancement in an asymmetrical semiconductor device
FREESCALE SEMICONDUCTOR INC19 citations92
US7821055B2Oct 26, 2010
Stressed semiconductor device and method for making
FREESCALE SEMICONDUCTOR INC37 citations91
US7811886B2Oct 12, 2010
Split-gate thin film storage NVM cell with reduced load-up/trap-up effects
FREESCALE SEMICONDUCTOR INC33 citations91
US7833852B2Nov 16, 2010
Source/drain stressors formed using in-situ epitaxial growth
FREESCALE SEMICONDUCTOR INC8 citations84
US7414877B2Aug 19, 2008
Electronic device including a static-random-access memory cell and a process of forming the electronic device
FREESCALE SEMICONDUCTOR INC16 citations84
US8035156B2Oct 11, 2011
Split-gate non-volatile memory cell and method
FREESCALE SEMICONDUCTOR INC8 citations83
US7985649B1Jul 26, 2011
Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
FREESCALE SEMICONDUCTOR INC18 citations83
US7420202B2Sep 2, 2008
Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device
FREESCALE SEMICONDUCTOR INC13 citations83
US7572706B2Aug 11, 2009
Source/drain stressor and method therefor
FREESCALE SEMICONDUCTOR INC7 citations74
US9111867B2Aug 18, 2015
Split gate nanocrystal memory integration
FREESCALE SEMICONDUCTOR INC3 citations63
US8048738B1Nov 1, 2011
Method for forming a split gate device
FREESCALE SEMICONDUCTOR INC3 citations63
US7960243B2Jun 14, 2011
Method of forming a semiconductor device featuring a gate stressor and semiconductor device
FREESCALE SEMICONDUCTOR INC4 citations63
US7957190B2Jun 7, 2011
Memory having P-type split gate memory cells and method of operation
FREESCALE SEMICONDUCTOR INC3 citations63
US7923328B2Apr 12, 2011
Split gate non-volatile memory cell with improved endurance and method therefor
FREESCALE SEMICONDUCTOR INC2 citations63
US7799644B2Sep 21, 2010
Transistor with asymmetry for data storage circuitry
FREESCALE SEMICONDUCTOR INC3 citations63
US7608898B2Oct 27, 2009
One transistor DRAM cell structure
FREESCALE SEMICONDUCTOR INC2 citations63
US7488635B2Feb 10, 2009
Semiconductor structure with reduced gate doping and methods for forming thereof
FREESCALE SEMICONDUCTOR INC3 citations63
US7479422B2Jan 20, 2009
Semiconductor device with stressors and method therefor
FREESCALE SEMICONDUCTOR INC2 citations63
US7714318B2May 11, 2010
Electronic device including a transistor structure having an active region adjacent to a stressor layer
FREESCALE SEMICONDUCTOR INC5 citations62
US7468313B2Dec 23, 2008
Engineering strain in thick strained-SOI substrates
FREESCALE SEMICONDUCTOR INC2 citations62
US7960267B2Jun 14, 2011
Method for making a stressed non-volatile memory device
FREESCALE SEMICONDUCTOR INC2 citations61
US7923769B2Apr 12, 2011
Split gate non-volatile memory cell with improved endurance and method therefor
FREESCALE SEMICONDUCTOR INC1 citations52
WINSTEAD BRIAN A
10 patentsUS7795091B2Sep 14, 2010
Method of forming a split gate memory device and apparatus
WINSTEAD BRIAN A47 citations92
US8390026B2Mar 5, 2013
Electronic device including a heterojunction region
WINSTEAD BRIAN A5 citations73
US8962416B1Feb 24, 2015
Split gate non-volatile memory cell
WINSTEAD BRIAN A3 citations62
US8724399B2May 13, 2014
Methods and systems for erase biasing of split-gate non-volatile memory cells
WINSTEAD BRIAN A3 citations62
US8587039B2Nov 19, 2013
Method of forming a semiconductor device featuring a gate stressor and semiconductor device
WINSTEAD BRIAN A2 citations62
US9425055B2Aug 23, 2016
Split gate memory cell with a layer of nanocrystals with improved erase performance
WINSTEAD BRIAN A1 citations52
US9847389B2Dec 19, 2017
Semiconductor device including an active region and two layers having different stress characteristics
WINSTEAD BRIAN A0 citations51
US8569858B2Oct 29, 2013
Semiconductor device including an active region and two layers having different stress characteristics
WINSTEAD BRIAN A0 citations51
US8884358B2Nov 11, 2014
Method of making a non-volatile memory (NVM) cell structure
WINSTEAD BRIAN A0 citations50
US9379222B2Jun 28, 2016
Method of making a split gate non-volatile memory (NVM) cell
WINSTEAD BRIAN A0 citations41
LOIKO KONSTANTIN V
6 patentsUS9343314B2May 17, 2016
Split gate nanocrystal memory integration
LOIKO KONSTANTIN V4 citations72
US9202930B2Dec 1, 2015
Memory with discrete storage elements
LOIKO KONSTANTIN V3 citations62
US8766362B2Jul 1, 2014
Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner
LOIKO KONSTANTIN V2 citations61
US8236638B2Aug 7, 2012
Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner
LOIKO KONSTANTIN V3 citations61
US9331160B2May 3, 2016
Split-gate non-volatile memory cells having gap protection zones
LOIKO KONSTANTIN V0 citations49
US9257445B2Feb 9, 2016
Method of making a split gate non-volatile memory (NVM) cell and a logic transistor
LOIKO KONSTANTIN V0 citations41