Inventor

KOUKITU AKINORI

JP32 patents

⚠️ This page may combine multiple inventors who share the name “KOUKITU AKINORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOUKITU AKINORI

SUMITOMO ELECTRIC INDUSTRIES

Process for vapor phase epitaxy of compound semiconductor

Epitaxial wafer and compound semiconductor light emitting device, and method of fabricating the same

Compound semiconductor light emitting device and method of preparing the same

Epitaxial wafer and method of preparing the same

Epitaxial wafer and method of preparing the same

Compound semiconductor light emitting device and method of preparing the same

Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same

Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride

Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate

Gallium nitride substrate and gallium nitride layer formation method

Gallium nitride baseplate and epitaxial substrate

KOUKITU AKINORI

Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device

Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal

Method of producing a group III nitride crystal

n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof

Highly transparent aluminum nitride single crystalline layers and devices made therefrom

Single-cystalline aluminum nitride substrate and a manufacturing method thereof

TAMURA SEISAKUSHO KK

Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer

Crystal laminate structure

Semiconductor element and crystalline laminate structure

Crystal laminate structure

High voltage withstand Ga2O3-based single crystal schottky barrier diode

Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structure

UNIV TOKYO AGRICULTURE & TECHNOLOGY TLO CO LTD

Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor

Method and apparatus for AlGan vapor phase growth

MITSUBISHI CHEM CORP

Method for producing GaN crystal

Method for producing GaN crystal

SORAA INC

Indium gallium nitride light emitting devices

NATIONAL UNIV CORPORATION TOKYO UNIV OF AGRICULTURE AND TECHNOLOGY

Vapor-liquid reaction device, reaction tube, film forming apparatus

NATIONAL UNIV CORPORATION TOKYO

Nitride semiconductor crystal, manufacturing method and manufacturing equipment

TOKYO ELECTRON LTD

ZnO film production system and production method using ZnO film production system having heating units and control device

UNIV OSAKA

Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device