Inventor
KUMAGAI YOSHINAO
JP23 patents
⚠️ This page may combine multiple inventors who share the name “KUMAGAI YOSHINAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAMURA SEISAKUSHO KK
7 patentsUS10676841B2Jun 9, 2020
Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
TAMURA SEISAKUSHO KK2 citations73
US10538862B2Jan 21, 2020
Crystal laminate structure
TAMURA SEISAKUSHO KK2 citations73
US10861945B2Dec 8, 2020
Semiconductor element and crystalline laminate structure
TAMURA SEISAKUSHO KK2 citations72
US11047067B2Jun 29, 2021
Crystal laminate structure
TAMURA SEISAKUSHO KK1 citations62
US10985016B2Apr 20, 2021
Semiconductor substrate, and epitaxial wafer and method for producing same
TAMURA SEISAKUSHO KK0 citations62
US10199512B2Feb 5, 2019
High voltage withstand Ga2O3-based single crystal schottky barrier diode
TAMURA SEISAKUSHO KK1 citations62
US11982016B2May 14, 2024
Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structure
TAMURA SEISAKUSHO KK0 citations52
KOUKITU AKINORI
6 patentsUS8822263B2Sep 2, 2014
Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
KOUKITU AKINORI9 citations82
US9281180B2Mar 8, 2016
Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal
KOUKITU AKINORI2 citations61
US8926752B2Jan 6, 2015
Method of producing a group III nitride crystal
KOUKITU AKINORI2 citations61
US8129208B2Mar 6, 2012
n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof
KOUKITU AKINORI4 citations61
US9840790B2Dec 12, 2017
Highly transparent aluminum nitride single crystalline layers and devices made therefrom
KOUKITU AKINORI1 citations48
US9691942B2Jun 27, 2017
Single-cystalline aluminum nitride substrate and a manufacturing method thereof
KOUKITU AKINORI0 citations46
SUMITOMO ELECTRIC INDUSTRIES
3 patentsUS7518216B2Apr 14, 2009
Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride
SUMITOMO ELECTRIC INDUSTRIES4 citations62
US7915149B2Mar 29, 2011
Gallium nitride substrate and gallium nitride layer formation method
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US7843040B2Nov 30, 2010
Gallium nitride baseplate and epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations51
UNIV TOKYO AGRICULTURE & TECHNOLOGY TLO CO LTD
2 patentsUS7645340B2Jan 12, 2010
Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor
UNIV TOKYO AGRICULTURE & TECHNOLOGY TLO CO LTD8 citations83
US7621999B2Nov 24, 2009
Method and apparatus for AlGan vapor phase growth
UNIV TOKYO AGRICULTURE & TECHNOLOGY TLO CO LTD7 citations73