Inventor
MAHOROWALA ARPAN P
US26 patents
⚠️ This page may combine multiple inventors who share the name “MAHOROWALA ARPAN P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
23 patentsUS6730454B2May 4, 2004
Antireflective SiO-containing compositions for hardmask layer
IBM112 citations98
US6649531B2Nov 18, 2003
Process for forming a damascene structure
IBM87 citations97
US6420084B1Jul 16, 2002
Mask-making using resist having SIO bond-containing polymer
IBM83 citations97
US6869899B2Mar 22, 2005
Lateral-only photoresist trimming for sub-80 nm gate stack
IBM26 citations92
US7030008B2Apr 18, 2006
Techniques for patterning features in semiconductor devices
IBM14 citations91
US6869542B2Mar 22, 2005
Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials
IBM35 citations89
US7326442B2Feb 5, 2008
Antireflective composition and process of making a lithographic structure
IBM11 citations84
US7223517B2May 29, 2007
Lithographic antireflective hardmask compositions and uses thereof
IBM14 citations84
US6849389B2Feb 1, 2005
Method to prevent pattern collapse in features etched in sulfur dioxide-containing plasmas
IBM16 citations84
US6780736B1Aug 24, 2004
Method for image reversal of implant resist using a single photolithography exposure and structures formed thereby
IBM16 citations84
US7172849B2Feb 6, 2007
Antireflective hardmask and uses thereof
IBM10 citations83
US7172969B2Feb 6, 2007
Method and system for etching a film stack
IBM13 citations80
US6903023B2Jun 7, 2005
In-situ plasma etch for TERA hard mask materials
IBM15 citations80
US7077903B2Jul 18, 2006
Etch selectivity enhancement for tunable etch resistant anti-reflective layer
IBM9 citations74
US7648820B2Jan 19, 2010
Antireflective hardmask and uses thereof
IBM7 citations73
US7497959B2Mar 3, 2009
Methods and structures for protecting one area while processing another area on a chip
IBM7 citations73
US7175966B2Feb 13, 2007
Water and aqueous base soluble antireflective coating/hardmask materials
IBM9 citations70
US6482566B1Nov 19, 2002
Hydroxycarborane photoresists and process for using same in bilayer thin film imaging lithography
IBM3 citations62
US7545041B2Jun 9, 2009
Techniques for patterning features in semiconductor devices
IBM4 citations61
US6586156B2Jul 1, 2003
Etch improved resist systems containing acrylate (or methacrylate) silane monomers
IBM6 citations61
US7276327B2Oct 2, 2007
Silicon-containing compositions for spin-on arc/hardmask materials
IBM2 citations59
US7968270B2Jun 28, 2011
Process of making a semiconductor device using multiple antireflective materials
IBM0 citations52
US7485573B2Feb 3, 2009
Process of making a semiconductor device using multiple antireflective materials
IBM1 citations52