Inventor

KIYAMA MAKOTO

JP51 patents

⚠️ This page may combine multiple inventors who share the name “KIYAMA MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIYAMA MAKOTO

SUMITOMO ELECTRIC INDUSTRIES

Apparatus for thermally processing semiconductor wafer

III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device

Light emitting device

Method of evaluating a semiconductor wafer

Method of evaluating and thermally processing semiconductor wafer

Method for fabricating gallium nitride based semiconductor electronic device

Epitaxial substrate and semiconductor element

High electron mobility transistor, field-effect transistor, and epitaxial substrate

Group III nitride semiconductor device and epitaxial substrate

Method of thermally processing semiconductor wafer

Gallium nitride substrate

Method of manufacturing group III Nitride Transistor

Light emitting apparatus

Method and device for determining backgate characteristics

Thermoelectric conversion material, thermoelectric conversion element and production method of thermoelectric conversion material

III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device

Thermoelectric conversion material, thermoelectric conversion element and thermoelectric conversion module

Schottky barrier diode and method for manufacturing schottky barrier diode

Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device

Vertical gallium nitride semiconductor device and epitaxial substrate

Light emitting apparatus

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module and optical sensor

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module and optical sensor

Gallium nitride substrate

Gallium nitride substrate

Gallium nitride substrate

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

Method for measuring withstand voltage of semiconductor epitaxial wafer and semiconductor epitaxial wafer

Method of producing semiconductor device

Semi-insulating gallium arsenide crystal substrate

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and optical sensor

Thermoelectric material element, power generation device, optical sensor, and method for manufacturing thermoelectric material

Gallium arsenide single crystal substrate and method of manufacturing same

Diode

OKADA MASAYA

Semiconductor device and method for manufacturing same

Semiconductor device and method for producing same

Semiconductor device and method for manufacturing same

Semiconductor device and method for producing the same

Semiconductor device and method for producing the same

HORII TAKU

Schottky barrier diode

Schottky barrier diode and method for manufacturing Schottky barrier diode

KIYAMA MAKOTO

Vertical GaN-based semiconductor device

Semiconductor device and method for producing the same

SATO FUMITAKA

Conductive nitride semiconductor substrate and method for producing the same

YAEGASHI SEIJI

Semiconductor device and method for producing the same

SHIOMI HIROMU

III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial wafer

SAITOH YU

Semiconductor device including GaN-based compound semiconductor stacked layer and method for producing the same

KYONO TAKASHI

Semiconductor device and method for manufacturing the same

MIYAZAKI TOMIHITO

Semiconductor device and method of producing same

FUJIWARA SHINSUKE

Semiconductor device and method of its manufacture