Inventor
IMANISHI KENJI
JP54 patents
⚠️ This page may combine multiple inventors who share the name “IMANISHI KENJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
21 patentsUS7859020B2Dec 28, 2010
Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifier
FUJITSU LTD31 citations93
US7795622B2Sep 14, 2010
Compound semiconductor device
FUJITSU LTD25 citations93
US6399971B1Jun 4, 2002
Semiconductor device and method for fabricating the same
FUJITSU LTD23 citations92
US5856209AJan 5, 1999
Method of making compound semiconductor device having a reduced resistance
FUJITSU LTD19 citations92
US5610410AMar 11, 1997
III-V compound semiconductor device with Schottky electrode of increased barrier height
FUJITSU LTD31 citations92
US8866157B2Oct 21, 2014
Semiconductor device and method of fabricating the semiconductor device
FUJITSU LTD9 citations84
US7638819B2Dec 29, 2009
Compound semiconductor device and the fabricating method of the same
FUJITSU LTD15 citations84
US7875535B2Jan 25, 2011
Compound semiconductor device using SiC substrate and its manufacture
FUJITSU LTD6 citations74
US6417519B1Jul 9, 2002
Field effect transistor with suppressed threshold change
FUJITSU LTD9 citations74
US5682040AOct 28, 1997
Compound semiconductor device having a reduced resistance
FUJITSU LTD8 citations74
US9608083B2Mar 28, 2017
Semiconductor device
FUJITSU LTD2 citations73
US8896022B2Nov 25, 2014
Method of manufacturing compound semiconductor device
FUJITSU LTD4 citations73
US8030164B2Oct 4, 2011
Compound semiconductor structure
FUJITSU LTD4 citations63
US7838903B2Nov 23, 2010
Compound semiconductor device and the fabricating method of the same
FUJITSU LTD4 citations63
US7663162B2Feb 16, 2010
Compound semiconductor device and doherty amplifier using compound semiconductor device
FUJITSU LTD2 citations63
US6867439B2Mar 15, 2005
Field-effect transistor using a group III-V compound semiconductor
FUJITSU LTD4 citations63
US9502525B2Nov 22, 2016
Compound semiconductor device and method of manufacturing the same
FUJITSU LTD2 citations62
US8044492B2Oct 25, 2011
Compound semiconductor device including AIN layer of controlled skewness
FUJITSU LTD2 citations62
US8969159B2Mar 3, 2015
Compound semiconductor device and manufacturing method thereof
FUJITSU LTD0 citations52
US7777251B2Aug 17, 2010
Compound semiconductor device and doherty amplifier using compound semiconductor device
FUJITSU LTD1 citations52
US6034382AMar 7, 2000
Current-driven semiconductor device and integrated circuit
FUJITSU LTD0 citations42
NIPPON STEEL CORP
8 patentsUS11420472B2Aug 23, 2022
Front axle beam and production method thereof
NIPPON STEEL CORP2 citations71
US11485392B2Nov 1, 2022
Eddy-current rail brake device
NIPPON STEEL CORP2 citations70
US11255407B2Feb 22, 2022
Eddy current damper
NIPPON STEEL CORP2 citations66
US12003160B2Jun 4, 2024
Eddy current deceleration device
NIPPON STEEL CORP0 citations60
US11390116B2Jul 19, 2022
Front axle beam and production method thereof
NIPPON STEEL CORP0 citations60
US11979057B2May 7, 2024
Rotor for eddy current deceleration device
NIPPON STEEL CORP0 citations59
US11165326B2Nov 2, 2021
Eddy current decelerating apparatus
NIPPON STEEL CORP0 citations51
US10734881B2Aug 4, 2020
Eddy current retarder with electricity generating function
NIPPON STEEL CORP0 citations50
NIPPON STEEL & SUMITOMO METAL CORP
6 patentsUS9656643B2May 23, 2017
Retarding device using a fluid
NIPPON STEEL & SUMITOMO METAL CORP3 citations72
US10491094B2Nov 26, 2019
Eddy current retarder with electricity generating function
NIPPON STEEL & SUMITOMO METAL CORP3 citations71
US9933032B2Apr 3, 2018
Eddy-current retarding device
NIPPON STEEL & SUMITOMO METAL CORP3 citations71
US9476435B2Oct 25, 2016
3-position operating actuator and permanent-magnet eddy-current deceleration device
NIPPON STEEL & SUMITOMO METAL CORP6 citations66
US10701768B2Jun 30, 2020
Eddy current heat generating apparatus
NIPPON STEEL & SUMITOMO METAL CORP0 citations51
US10756612B2Aug 25, 2020
Eddy current deceleration device
NIPPON STEEL & SUMITOMO METAL CORP0 citations41
IMANISHI KENJI
5 patentsUS8426892B2Apr 23, 2013
Compound semiconductor device and method of manufacturing the same
IMANISHI KENJI11 citations83
US8264006B2Sep 11, 2012
Compound semiconductor device including AIN layer of controlled skewness
IMANISHI KENJI4 citations72
US8581335B2Nov 12, 2013
Compound semiconductor device and manufacturing method thereof
IMANISHI KENJI2 citations62
US8440549B2May 14, 2013
Compound semiconductor device including aln layer of controlled skewness
IMANISHI KENJI0 citations50
US8264005B2Sep 11, 2012
Compound semiconductor device including AIN layer of controlled skewness
IMANISHI KENJI0 citations50
KIKKAWA TOSHIHIDE
3 patentsUS8294181B2Oct 23, 2012
Compound semiconductor device and method of manufacturing the same
KIKKAWA TOSHIHIDE10 citations84
US8507329B2Aug 13, 2013
Compound semiconductor device and method of manufacturing the same
KIKKAWA TOSHIHIDE3 citations62
US8193539B2Jun 5, 2012
Compound semiconductor device using SiC substrate and its manufacture
KIKKAWA TOSHIHIDE1 citations52
MIYAJIMA TOYOO
2 patentsKANAMURA MASAHITO
1 patentSHIMIZU SANAE
1 patentKOBE STEEL LTD
1 patentSUMITOMO METAL IND
1 patentSUZUMA TOSHIYUKI
1 patentShowing the top 50 of 54 patents by PatentIndex Score.