Inventor

SCHALLER MATTHIAS

DE34 patents

⚠️ This page may combine multiple inventors who share the name “SCHALLER MATTHIAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SCHALLER MATTHIAS

ADVANCED MICRO DEVICES INC

Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device

Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress

Technique for controlling mechanical stress in a channel region by spacer removal

Semiconductor device comprising a contact structure with increased etch selectivity

Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress

Polysilicon line having a metal silicide region enabling linewidth scaling including forming a second metal silicide region on the substrate

Method of reducing erosion of a metal cap layer during via patterning in semiconductor devices

Technique for reducing etch damage during the formation of vias and trenches in interlayer dielectrics

Technique for increasing adhesion of metallization layers by providing dummy vias

Metallization layer of a semiconductor device having differently thick metal lines and a method of forming the same

Method of increasing the etch selectivity in a contact structure of semiconductor devices

Method of compensating for etch rate non-uniformities by ion implantation

Signal layer for generating characteristic optical plasma emissions

Method for forming a metallization layer stack to reduce the roughness of metal lines

Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress

Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer

Technique for forming a dielectric etch stop layer above a structure including closely spaced lines

Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements

SCHALLER MATTHIAS

Repair of damaged surface areas of sensitive low-K dielectrics of microstructure devices after plasma processing by in situ treatment

Re-establishing surface characteristics of sensitive low-k dielectrics in microstructure device by using an in situ surface modification

Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements

Method and system for quantitative inline material characterization in semiconductor production processes based on structural measurements and related models

Method for passivating exposed copper surfaces in a metallization layer of a semiconductor device

GLOBALFOUNDRIES INC

Method for reducing etch-induced process uniformities by omitting deposition of an endpoint detection layer during patterning of stressed overlayers in a semiconductor device

Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies

Technique for enhancing process flexibility during the formation of vias and trenches in low-k interlayer dielectrics

FISCHER DANIEL

Establishing a hydrophobic surface of sensitive low-k dielectrics of microstructure devices by in situ plasma treatment

High yield plasma etch process for interlayer dielectrics

FROHBERG KAI

Dual contact metallization including electroless plating in a semiconductor device

Technique for enhancing the fill capabilities in an electrochemical deposition process by edge rounding of trenches

CHUMAKOV DMYTRO

Method and system for extracting samples after patterning of microstructure devices

BAARS PETER

Semiconductor device comprising self-aligned contact elements

BARTSCH CHRISTIN

Method of reducing erosion of a metal cap layer during via patterning in semiconductor devices

HETZER PETRA

Method and system for particles analysis in microstructure devices by isolating particles