Inventor
AKIYAMA HIROAKI
JP22 patents
⚠️ This page may combine multiple inventors who share the name “AKIYAMA HIROAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KUROKAWA OSAMU
10 patentsUS9055437B2Jun 9, 2015
Communication system, femtocell base station, authentication apparatus, communication method, and recording medium
KUROKAWA OSAMU6 citations70
US8880094B2Nov 4, 2014
Broadcast distribution control device, call status control device, femto cell base station, communication system, method and programme
KUROKAWA OSAMU2 citations61
US8699416B2Apr 15, 2014
Communication system, femto-cell base station, authentication device, communication method, and memory medium
KUROKAWA OSAMU2 citations57
US9215576B2Dec 15, 2015
Communication system, femto base station, call session control server, home subscriber server, communication method, and program
KUROKAWA OSAMU1 citations50
US8620378B2Dec 31, 2013
Communication system, Femto Access Point and communication method
KUROKAWA OSAMU0 citations50
US9609494B2Mar 28, 2017
Communication system and apparatus for providing supplementary service in femto cell
KUROKAWA OSAMU0 citations48
US9019988B2Apr 28, 2015
Communication system and apparatus for providing supplementary service in femto cell
KUROKAWA OSAMU0 citations48
US8649767B2Feb 11, 2014
Femtocell communication system, apparatus, control method, and program
KUROKAWA OSAMU0 citations39
US9191387B2Nov 17, 2015
Communication system for checking for unauthorized use of a terminal
KUROKAWA OSAMU0 citations38
US9088880B2Jul 21, 2015
Femtocell base station, gateway system, MAP-GW apparatus, communication system, control method, and program
KUROKAWA OSAMU0 citations38
KOKUYO KK
2 patentsSEIKO EPSON CORP
2 patentsMIYAGAWA YUSUKE
2 patentsNEC CORP
2 patentsUS5089435AFeb 18, 1992
Method of making a field effect transistor with short channel length
NEC CORP11 citations73
US5936290AAug 10, 1999
Semiconductor device having an insulated gate field effect transistor and a well spaced from the channel region of the insulated gate field effect transistor
NEC CORP1 citations51