Inventor

SHIMAMOTO YASUHIRO

JP49 patents

⚠️ This page may combine multiple inventors who share the name “SHIMAMOTO YASUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIMAMOTO YASUHIRO

HITACHI LTD

Semiconductor storage device with ferrielectric capacitor and metal-oxide isolation

Semiconductor storage device

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Ferroelectric capacitor with a self-aligned diffusion barrier

Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device

Production of semiconductor integrated circuit

Semiconductor device having a capacitor structure including a self-alignment deposition preventing film

Ferroelectric capacitor with a self-aligned diffusion barrier

Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layer

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Method for making semiconductor integrated circuits

4h-SiC semiconductor element and semiconductor device

Semiconductor integrated circuits and fabricating method thereof

RENESAS TECH CORP

Fabrication method for semiconductor integrated devices

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Fabrication method for semiconductor integrated devices

Production of semiconductor integrated circuit

Non-volatile semiconductor memory device and method of manufacturing the same

Method for manufacturing a ruthenium film for a semiconductor device

Nonvolatile semiconductor storage device having an element formation region and a plurality of element isolation regions and manufacturing method of the same

Semiconductor storage device which includes a hydrogen diffusion inhibiting layer

Semiconductor device and manufacturing method thereof

RENESAS ELECTRONICS CORP

Split-gate type memory device

Semiconductor device and manufacturing method of the same

Nonvolatile semiconductor memory devices with charge injection corner

Semiconductor device and manufacturing of the same

Semiconductor storage device and manufacturing method thereof

Semiconductor storage device and manufacturing method thereof

Nonvolatile semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method thereof

MINE TOSHIYUKI

Non-volatile memory device with a silicon nitride charge holding film having an excess of silicon

Field effect silicon carbide transistor

MOS field effect transistor

AKITA KENICHI

Nonvolatile semiconductor device including a field effect transistor having a charge storage layer of predetermined length

Nonvolatile semiconductor device and method of manufacturing the same

HISAMOTO DIGH

Semiconductor device

YANAGI ITARU

Semiconductor storage device and manufacturing method thereof

RENESAS TECHONOLOGY CORP

Fabricating method of semiconductor integrated circuits

ISHIMARU TETSUYA

Nonvolatile semiconductor memory device

SHIMAMOTO YASUHIRO

Semiconductor device and manufacturing method of the same

ARIGANE TSUYOSHI

Non-volatile semiconductor memory device and method of manufacturing the same

MITSUI MINING & SMELTING CO LTD

Composition for exhaust gas purification, exhaust gas purifying catalyst containing same, and exhaust gas purifying catalyst structure

HAMAMURA HIROTAKA

Silicon carbide semiconductor device

MATSUMOTO DAISUKE

Semiconductor device and manufacturing method of semiconductor device

TEGA NAOKI

Silicon carbide semiconductor device and manufacturing method thereof