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Inventor

CHENG TSUN-MIN

TW45 patents
⚠️ This page may combine multiple inventors who share the name “CHENG TSUN-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

35 patents
US10043811B1Aug 7, 2018

Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same

UNITED MICROELECTRONICS CORP14 citations92
US8735269B1May 27, 2014

Method for forming semiconductor structure having TiN layer

UNITED MICROELECTRONICS CORP7 citations84
US9953982B1Apr 24, 2018

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP7 citations83
US9754943B1Sep 5, 2017

Dynamic random access memory device

UNITED MICROELECTRONICS CORP8 citations83
US10475799B2Nov 12, 2019

Method of fabricating bit line

UNITED MICROELECTRONICS CORP2 citations73
US10290638B1May 14, 2019

Method of forming dynamic random access memory device

UNITED MICROELECTRONICS CORP5 citations73
US9773789B1Sep 26, 2017

Dynamic random access memory device

UNITED MICROELECTRONICS CORP3 citations73
US10312242B2Jun 4, 2019

Semiconductor memory device

UNITED MICROELECTRONICS CORP2 citations72
US10211211B1Feb 19, 2019

Method for fabricating buried word line of a dynamic random access memory

UNITED MICROELECTRONICS CORP2 citations72
US9859123B1Jan 2, 2018

Method for fabricating semiconductor device

UNITED MICROELECTRONICS CORP2 citations72
US12075613B2Aug 27, 2024

Buried word line of a dynamic random access memory and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US11799012B2Oct 24, 2023

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US11251187B2Feb 15, 2022

Buried word line of a dynamic random access memory and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US11239243B2Feb 1, 2022

Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same

UNITED MICROELECTRONICS CORP0 citations62
US11239241B2Feb 1, 2022

Bit line utilized in DRAM

UNITED MICROELECTRONICS CORP1 citations62
US11088023B2Aug 10, 2021

Method of forming a semiconductor structure

UNITED MICROELECTRONICS CORP0 citations62
US10475900B2Nov 12, 2019

Method for manufacturing a semiconductor device with a cobalt silicide film

UNITED MICROELECTRONICS CORP1 citations62
US10374051B1Aug 6, 2019

Method for fabricating semiconductor device

UNITED MICROELECTRONICS CORP1 citations62
US11877433B2Jan 16, 2024

Storage node contact structure of a memory device

UNITED MICROELECTRONICS CORP0 citations61
US11222784B2Jan 11, 2022

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations60
US10685964B2Jun 16, 2020

Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same

UNITED MICROELECTRONICS CORP0 citations52
US10672774B2Jun 2, 2020

Bit line gate structure of dynamic random access memory (DRAM) and forming method thereof

UNITED MICROELECTRONICS CORP0 citations52
US10465287B2Nov 5, 2019

Semiconductor device and method of forming the same

UNITED MICROELECTRONICS CORP0 citations52
US10199228B2Feb 5, 2019

Manufacturing method of metal gate structure

UNITED MICROELECTRONICS CORP0 citations52
US9653300B2May 16, 2017

Structure of metal gate structure and manufacturing method of the same

UNITED MICROELECTRONICS CORP0 citations52
US10804365B2Oct 13, 2020

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations51
US10756090B2Aug 25, 2020

Storage node contact structure of a memory device and manufacturing methods thereof

UNITED MICROELECTRONICS CORP0 citations51
US10707214B2Jul 7, 2020

Fabricating method of cobalt silicide layer coupled to contact plug

UNITED MICROELECTRONICS CORP0 citations51
US10276389B1Apr 30, 2019

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations51
US9412653B2Aug 9, 2016

Through silicon via (TSV) process

UNITED MICROELECTRONICS CORP0 citations51
US9076784B2Jul 7, 2015

Transistor and semiconductor structure

UNITED MICROELECTRONICS CORP0 citations51
US10651040B2May 12, 2020

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations50
US9281374B2Mar 8, 2016

Metal gate structure and fabrication method thereof

UNITED MICROELECTRONICS CORP1 citations50
US10323332B2Jun 18, 2019

Electrical chemical plating process

UNITED MICROELECTRONICS CORP0 citations49
US9548268B2Jan 17, 2017

Semiconductor device having bilayer metal layer

UNITED MICROELECTRONICS CORP0 citations46

Chen jia-jia

2 patents

FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD

2 patents

TSAI MIN-CHUAN

1 patent

NEXCHIP SEMICONDUCTOR CORP

1 patent

HUANG HSIN-FU

1 patent

CHENG TSUN-MIN

1 patent

LU YEN-LIANG

1 patent

LIN CHUN-LING

1 patent