Inventor
CHENG TSUN-MIN
TW45 patents
⚠️ This page may combine multiple inventors who share the name “CHENG TSUN-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
35 patentsUS10043811B1Aug 7, 2018
Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same
UNITED MICROELECTRONICS CORP14 citations92
US8735269B1May 27, 2014
Method for forming semiconductor structure having TiN layer
UNITED MICROELECTRONICS CORP7 citations84
US9953982B1Apr 24, 2018
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP7 citations83
US9754943B1Sep 5, 2017
Dynamic random access memory device
UNITED MICROELECTRONICS CORP8 citations83
US10475799B2Nov 12, 2019
Method of fabricating bit line
UNITED MICROELECTRONICS CORP2 citations73
US10290638B1May 14, 2019
Method of forming dynamic random access memory device
UNITED MICROELECTRONICS CORP5 citations73
US9773789B1Sep 26, 2017
Dynamic random access memory device
UNITED MICROELECTRONICS CORP3 citations73
US10312242B2Jun 4, 2019
Semiconductor memory device
UNITED MICROELECTRONICS CORP2 citations72
US10211211B1Feb 19, 2019
Method for fabricating buried word line of a dynamic random access memory
UNITED MICROELECTRONICS CORP2 citations72
US9859123B1Jan 2, 2018
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP2 citations72
US12075613B2Aug 27, 2024
Buried word line of a dynamic random access memory and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US11799012B2Oct 24, 2023
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US11251187B2Feb 15, 2022
Buried word line of a dynamic random access memory and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US11239243B2Feb 1, 2022
Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same
UNITED MICROELECTRONICS CORP0 citations62
US11239241B2Feb 1, 2022
Bit line utilized in DRAM
UNITED MICROELECTRONICS CORP1 citations62
US11088023B2Aug 10, 2021
Method of forming a semiconductor structure
UNITED MICROELECTRONICS CORP0 citations62
US10475900B2Nov 12, 2019
Method for manufacturing a semiconductor device with a cobalt silicide film
UNITED MICROELECTRONICS CORP1 citations62
US10374051B1Aug 6, 2019
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP1 citations62
US11877433B2Jan 16, 2024
Storage node contact structure of a memory device
UNITED MICROELECTRONICS CORP0 citations61
US11222784B2Jan 11, 2022
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations60
US10685964B2Jun 16, 2020
Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same
UNITED MICROELECTRONICS CORP0 citations52
US10672774B2Jun 2, 2020
Bit line gate structure of dynamic random access memory (DRAM) and forming method thereof
UNITED MICROELECTRONICS CORP0 citations52
US10465287B2Nov 5, 2019
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP0 citations52
US10199228B2Feb 5, 2019
Manufacturing method of metal gate structure
UNITED MICROELECTRONICS CORP0 citations52
US9653300B2May 16, 2017
Structure of metal gate structure and manufacturing method of the same
UNITED MICROELECTRONICS CORP0 citations52
US10804365B2Oct 13, 2020
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US10756090B2Aug 25, 2020
Storage node contact structure of a memory device and manufacturing methods thereof
UNITED MICROELECTRONICS CORP0 citations51
US10707214B2Jul 7, 2020
Fabricating method of cobalt silicide layer coupled to contact plug
UNITED MICROELECTRONICS CORP0 citations51
US10276389B1Apr 30, 2019
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US9412653B2Aug 9, 2016
Through silicon via (TSV) process
UNITED MICROELECTRONICS CORP0 citations51
US9076784B2Jul 7, 2015
Transistor and semiconductor structure
UNITED MICROELECTRONICS CORP0 citations51
US10651040B2May 12, 2020
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations50
US9281374B2Mar 8, 2016
Metal gate structure and fabrication method thereof
UNITED MICROELECTRONICS CORP1 citations50
US10323332B2Jun 18, 2019
Electrical chemical plating process
UNITED MICROELECTRONICS CORP0 citations49
US9548268B2Jan 17, 2017
Semiconductor device having bilayer metal layer
UNITED MICROELECTRONICS CORP0 citations46
Chen jia-jia
2 patentsFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
2 patentsUS12581638B2Mar 17, 2026
Semiconductor memory device having interface layer between capacitor structures and method of fabricating the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations58
US12213303B2Jan 28, 2025
Semiconductor device and method of fabricating the same
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations53