Inventor
Wang shao-wei
TW20 patents
⚠️ This page may combine multiple inventors who share the name “Wang shao-wei”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
10 patentsUS9418853B1Aug 16, 2016
Method for forming a stacked layer structure
UNITED MICROELECTRONICS CORP21 citations90
US11876122B2Jan 16, 2024
Method for forming semiconductor device
UNITED MICROELECTRONICS CORP0 citations62
US11545557B2Jan 3, 2023
Semiconductor device and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations62
US11862727B2Jan 2, 2024
Method for fabricating fin structure for fin field effect transistor
UNITED MICROELECTRONICS CORP0 citations55
US11581438B2Feb 14, 2023
Fin structure for fin field effect transistor and method for fabrication the same
UNITED MICROELECTRONICS CORP0 citations55
US9406516B2Aug 2, 2016
High-K metal gate process for lowering junction leakage and interface traps in NMOS transistor
UNITED MICROELECTRONICS CORP0 citations51
US12402367B2Aug 26, 2025
Semiconductor structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP0 citations50
US9281374B2Mar 8, 2016
Metal gate structure and fabrication method thereof
UNITED MICROELECTRONICS CORP1 citations50
US9406772B1Aug 2, 2016
Semiconductor structure with a multilayer gate oxide and method of fabricating the same
UNITED MICROELECTRONICS CORP1 citations48
US9349599B1May 24, 2016
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations48
Wang shao-wei
4 patentsUS8536038B2Sep 17, 2013
Manufacturing method for metal gate using ion implantation
Wang shao-wei10 citations82
US8501636B1Aug 6, 2013
Method for fabricating silicon dioxide layer
Wang shao-wei5 citations71
US8921238B2Dec 30, 2014
Method for processing high-k dielectric layer
Wang shao-wei1 citations51
US8501634B2Aug 6, 2013
Method for fabricating gate structure
Wang shao-wei0 citations51