Inventor
YANG JONG-IN
KR24 patents
⚠️ This page may combine multiple inventors who share the name “YANG JONG-IN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS9099631B2Aug 4, 2015
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD34 citations98
US9293675B2Mar 22, 2016
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD26 citations94
US8975655B2Mar 10, 2015
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations84
US10038127B2Jul 31, 2018
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9660163B2May 23, 2017
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9324904B2Apr 26, 2016
Semiconductor light emitting device and light emitting apparatus
SAMSUNG ELECTRONICS CO LTD5 citations71
US9166109B2Oct 20, 2015
Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structure
SAMSUNG ELECTRONICS CO LTD2 citations60
US9099629B2Aug 4, 2015
Semiconductor light emitting device and light emitting apparatus
SAMSUNG ELECTRONICS CO LTD3 citations60
US10978614B2Apr 13, 2021
Light-emitting device
SAMSUNG ELECTRONICS CO LTD1 citations58
US10930817B2Feb 23, 2021
Light-emitting device
SAMSUNG ELECTRONICS CO LTD1 citations58
US8877562B2Nov 4, 2014
Method of manufacturing light-emitting device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9362718B2Jun 7, 2016
Semiconductor light emitting device
SAMSUNG ELECTRONICS CO LTD1 citations51
YANG JONG IN
5 patentsUS8110417B2Feb 7, 2012
Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device
YANG JONG IN3 citations62
US8110424B2Feb 7, 2012
Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor
YANG JONG IN2 citations62
US8932891B2Jan 13, 2015
Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device
YANG JONG IN2 citations61
US8476639B2Jul 2, 2013
Group III nitride semiconductor and group III nitride semiconductor structure
YANG JONG IN1 citations51
US8829548B2Sep 9, 2014
Light emitting device package and fabrication method thereof
YANG JONG IN0 citations39
SAMSUNG LED CO LTD
3 patentsUS7838315B2Nov 23, 2010
Method of manufacturing vertical light emitting diode
SAMSUNG LED CO LTD32 citations92
US7816284B2Oct 19, 2010
Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device
SAMSUNG LED CO LTD2 citations63
US7859086B2Dec 28, 2010
Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same
SAMSUNG LED CO LTD0 citations52