Inventor
SONE CHEOL-SOO
KR41 patents
⚠️ This page may combine multiple inventors who share the name “SONE CHEOL-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS9099631B2Aug 4, 2015
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD34 citations98
US9293675B2Mar 22, 2016
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD26 citations94
US8975655B2Mar 10, 2015
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations84
US9024294B2May 5, 2015
Group III nitride nanorod light emitting device
SAMSUNG ELECTRONICS CO LTD11 citations83
US10038127B2Jul 31, 2018
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9660163B2May 23, 2017
Semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US9054259B2Jun 9, 2015
Light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US9012884B2Apr 21, 2015
Semiconductor light-emitting devices including contact layers to form reflective electrodes
SAMSUNG ELECTRONICS CO LTD3 citations62
US8907320B2Dec 9, 2014
Light-emitting diode for emitting ultraviolet light
SAMSUNG ELECTRONICS CO LTD2 citations61
US9142724B2Sep 22, 2015
Nitride-based semiconductor light-emitting device
SAMSUNG ELECTRONICS CO LTD1 citations52
US8877562B2Nov 4, 2014
Method of manufacturing light-emitting device
SAMSUNG ELECTRONICS CO LTD0 citations52
US8378381B2Feb 19, 2013
GaN-based semiconductor light emitting device
SAMSUNG ELECTRONICS CO LTD0 citations52
US8372672B2Feb 12, 2013
Nitride semiconductor light emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
SAMSUNG ELECTRO MECH
10 patentsUS7541206B2Jun 2, 2009
Nitride-based semiconductor light-emitting device and method of manufacturing the same
SAMSUNG ELECTRO MECH35 citations92
US6744064B2Jun 1, 2004
Nitride semiconductor light emitting device
SAMSUNG ELECTRO MECH36 citations92
US6500747B1Dec 31, 2002
Method of manufacturing GaN semiconductor substrate
SAMSUNG ELECTRO MECH36 citations92
US7483212B2Jan 27, 2009
Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
SAMSUNG ELECTRO MECH45 citations91
US7411221B2Aug 12, 2008
Light emitting device having protection element and method of manufacturing the light emitting device
SAMSUNG ELECTRO MECH16 citations81
US7459846B2Dec 2, 2008
Red phosphor and method of preparing the same, and red light emitting diode, white light emitting diode, and active dynamic liquid crystal device using the red phosphor
SAMSUNG ELECTRO MECH7 citations72
US7531465B2May 12, 2009
Method of manufacturing nitride-based semiconductor light emitting device
SAMSUNG ELECTRO MECH7 citations71
US6555167B2Apr 29, 2003
Method for growing high quality group-III nitride thin film by metal organic chemical vapor deposition
SAMSUNG ELECTRO MECH2 citations60
US7981775B2Jul 19, 2011
Nitride semiconductor light-emitting device having high light efficiency and method of manfacturing the same
SAMSUNG ELECTRO MECH0 citations52
US7560746B2Jul 14, 2009
Light emitting diodes and display apparatuses using the same
SAMSUNG ELECTRO MECH1 citations52
SAMSUNG LED CO LTD
7 patentsUS8039850B2Oct 18, 2011
White light emitting device
SAMSUNG LED CO LTD33 citations92
US7816855B2Oct 19, 2010
LED device having diffuse reflective surface
SAMSUNG LED CO LTD2 citations63
US8004000B2Aug 23, 2011
Polarized light emitting diode and method of forming the same
SAMSUNG LED CO LTD4 citations62
US7825428B2Nov 2, 2010
GaN-based semiconductor light emitting device
SAMSUNG LED CO LTD4 citations62
US7923716B2Apr 12, 2011
Nitride semiconductor device
SAMSUNG LED CO LTD5 citations61
US7928467B2Apr 19, 2011
Nitride semiconductor light emitting device and manufacturing method of the same
SAMSUNG LED CO LTD0 citations52
US7943290B2May 17, 2011
Method of forming fine pattern using azobenzene-functionalized polymer and method of manufacturing nitride-based semiconductor light emitting device using the method of forming fine pattern
SAMSUNG LED CO LTD1 citations50