Inventor

JO GUN HO

KR2 patents

Patents

2 patents

US11069820B2Jul 20, 2021

FinFET devices having active patterns and gate spacers on field insulating layers

SAMSUNG ELECTRONICS CO LTD2 citations71

US10658249B2May 19, 2020

Methods for fabricating finFET devices having gate spacers on field insulating layers

SAMSUNG ELECTRONICS CO LTD0 citations50