Inventor

OHNO HIDEO

JP84 patents

⚠️ This page may combine multiple inventors who share the name “OHNO HIDEO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OHNO HIDEO

UNIV TOHOKU

Spin filter

Intersubband light emitting element

Integrated circuit

Method of generating spin-polarized conduction electron and semiconductor device

Magnetoresistance effect element and magnetic memory device

Magnetic tunnel junction element and magnetic memory

Magnetic tunnel junction element and magnetic memory

Data-write device for resistance-change memory element

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element

Method of manufacturing magnetic tunnel coupling element

Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circuit unit

Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circut unit

Magnetoresistive element and magnetic memory

Data write circuit of resistive memory element

Spin electronics element and method of manufacturing thereof

Magnetoresistive element and magnetic memory

OHNO HIDEO

Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same

Magnetoresistance effect element and magnetic memory

Tunnel magnetoresistive effect element and random access memory using same

Magnetoresistive element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetic memory cell and magnetic random access memory

Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory

NEC CORP

Remote-controlled camera-picture broadcast system

Three terminal magnetoresistive devices, magnetoresistive random access memory and magnetic recording method

Magnetic-domain-wall-displacement memory cell and initializing method therefor

Nonvolatile logic gate device

Nonvolatile content addressable memory and method for operating same

HITACHI LTD

Tunnel magnetic resistance device, and magnetic memory cell and magnetic random access memory using the same

Magnetic memory cell and magnetic random access memory

Magnetic memory cell and random access memory

Magnetoresistive device and nonvolatile magnetic memory equipped with the same

IBM

Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions

Class of magnetic materials for solid state devices

Class of magnetic materials for solid state devices

JAPAN SCIENCE & TECH AGENCY

Transistor and semiconductor device

Optical semiconductor element utilizing optical transition between ZnO heterostructure sub-bands

JAPAN SCIENCE & TECH CORP

Transistor and semiconductor device

Semiconductor device

SHARP KK

Thin film transistor and matrix display device

Semiconductor device and display comprising same

SUGIHARA TOSHINORI

Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device

ETO GORO

Light converting type detectors

URAYAMA MASAO

Semiconductor element, method for manufacturing same, and electronic device including same

JAPAN ATOMIC ENERGY RES INST

Recovery method of tritium from tritiated water

YAMAMOTO HIROKI

Method of manufacturing tunneling magnetoresistive element

UNIV HOKKAIDO

Solid state electromagnetic wave amplifier