Inventor
MATSUKURA FUMIHIRO
JP17 patents
⚠️ This page may combine multiple inventors who share the name “MATSUKURA FUMIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV TOHOKU
12 patentsUS6482729B2Nov 19, 2002
Method of generating spin-polarized conduction electron and semiconductor device
UNIV TOHOKU17 citations83
US11563169B2Jan 24, 2023
Magnetic tunnel junction element and magnetic memory
UNIV TOHOKU2 citations72
US9564152B2Feb 7, 2017
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU4 citations72
US9202545B2Dec 1, 2015
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU5 citations72
US10804457B2Oct 13, 2020
Magnetoresistive element and magnetic memory
UNIV TOHOKU1 citations61
US10651369B2May 12, 2020
Magnetoresistive element and magnetic memory
UNIV TOHOKU0 citations51
US9577182B2Feb 21, 2017
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations51
US6861342B2Mar 1, 2005
Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure
UNIV TOHOKU1 citations51
US10658572B2May 19, 2020
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations50
US10164174B2Dec 25, 2018
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU1 citations50
US10263180B2Apr 16, 2019
Magnetoresistance effect element and magnetic memory
UNIV TOHOKU0 citations42
US10127957B2Nov 13, 2018
Control method for magnetoresistance effect element and control device for magnetoresistance effect element
UNIV TOHOKU0 citations40
OHNO HIDEO
5 patentsUS8917541B2Dec 23, 2014
Magnetoresistance effect element and magnetic memory
OHNO HIDEO7 citations82
US9450177B2Sep 20, 2016
Magnetoresistive element and magnetic memory
OHNO HIDEO4 citations71
US9135973B2Sep 15, 2015
Magnetoresistance effect element and magnetic memory
OHNO HIDEO5 citations71
US8331140B2Dec 11, 2012
Current injection magnetic domain wall moving element
OHNO HIDEO1 citations49
US8310867B2Nov 13, 2012
Nonvolatile solid state magnetic memory and recording method thereof
OHNO HIDEO0 citations39