Inventor
MIURA KATSUYA
JP25 patents
⚠️ This page may combine multiple inventors who share the name “MIURA KATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
OHNO HIDEO
6 patentsUS8917541B2Dec 23, 2014
Magnetoresistance effect element and magnetic memory
OHNO HIDEO7 citations82
US9153306B2Oct 6, 2015
Tunnel magnetoresistive effect element and random access memory using same
OHNO HIDEO5 citations72
US9450177B2Sep 20, 2016
Magnetoresistive element and magnetic memory
OHNO HIDEO4 citations71
US9135973B2Sep 15, 2015
Magnetoresistance effect element and magnetic memory
OHNO HIDEO5 citations71
US8837209B2Sep 16, 2014
Magnetic memory cell and magnetic random access memory
OHNO HIDEO2 citations62
US9070457B2Jun 30, 2015
Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory
OHNO HIDEO2 citations61
HITACHI LTD
5 patentsUS7872906B2Jan 18, 2011
Unidirectional-current magnetization-reversal magnetoresistance element and magnetic recording apparatus
HITACHI LTD7 citations84
US7755932B2Jul 13, 2010
Spin torque magnetic memory and offset magnetic field correcting method thereof
HITACHI LTD12 citations84
US9602103B2Mar 21, 2017
Spin wave device and logic circuit using spin wave device
HITACHI LTD2 citations73
US7613036B2Nov 3, 2009
Memory element utilizing magnetization switching caused by spin accumulation and spin RAM device using the memory element
HITACHI LTD0 citations41
US10336609B2Jul 2, 2019
Microstructure processing method and microstructure processing apparatus
HITACHI LTD0 citations40
HITACHI HIGH TECH CORP
4 patentsUS11276816B2Mar 15, 2022
Method of manufacturing magnetic tunnel junction and magnetic tunnel junction
HITACHI HIGH TECH CORP3 citations72
US11678583B2Jun 13, 2023
Method of manufacturing magnetic tunnel junction and magnetic tunnel junction
HITACHI HIGH TECH CORP0 citations62
US11165015B2Nov 2, 2021
Magnetic tunnel junction device, magnetoresistive random access memory using same and manufacturing method of magnetic tunnel junction device
HITACHI HIGH TECH CORP0 citations52
US11164906B2Nov 2, 2021
Magnetic tunnel junction element, magnetic memory using the same, and manufacture method of magnetic tunnel junction element
HITACHI HIGH TECH CORP0 citations51