Inventor
KUO MING-HONG
TW22 patents
⚠️ This page may combine multiple inventors who share the name “KUO MING-HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VANGUARD INT SEMICONDUCT CORP
10 patentsUS6261923B1Jul 17, 2001
Method to solve the dishing issue in CMP planarization by using a nitride hard mask for local inverse etchback and CMP
VANGUARD INT SEMICONDUCT CORP30 citations92
US6184081B1Feb 6, 2001
Method of fabricating a capacitor under bit line DRAM structure using contact hole liners
VANGUARD INT SEMICONDUCT CORP57 citations92
US6133599AOct 17, 2000
Design and a novel process for formation of DRAM bit line and capacitor node contacts
VANGUARD INT SEMICONDUCT CORP25 citations92
US6057210AMay 2, 2000
Method of making a shallow trench isolation for ULSI formation via in-direct CMP process
VANGUARD INT SEMICONDUCT CORP46 citations92
US6017813AJan 25, 2000
Method for fabricating a damascene landing pad
VANGUARD INT SEMICONDUCT CORP23 citations92
US6008085ADec 28, 1999
Design and a novel process for formation of DRAM bit line and capacitor node contacts
VANGUARD INT SEMICONDUCT CORP39 citations92
US5658822AAug 19, 1997
Locos method with double polysilicon/silicon nitride spacer
VANGUARD INT SEMICONDUCT CORP37 citations92
US5643824AJul 1, 1997
Method of forming nitride sidewalls having spacer feet in a locos process
VANGUARD INT SEMICONDUCT CORP20 citations91
US6171929B1Jan 9, 2001
Shallow trench isolator via non-critical chemical mechanical polishing
VANGUARD INT SEMICONDUCT CORP30 citations90
US6060348AMay 9, 2000
Method to fabricate isolation by combining locos and shallow trench isolation for ULSI technology
VANGUARD INT SEMICONDUCT CORP6 citations63
ETRON TECHNOLOGY INC
3 patentsINVENT AND COLLABORATION LABORATORY PTE LTD
2 patentsUS12575084B2Mar 10, 2026
Memory structure having a buried word line
INVENT AND COLLABORATION LABORATORY PTE LTD0 citations57
US12125910B2Oct 22, 2024
Transistor structure with increased gate dielectric thickness between gate-to-drain overlap region
INVENT AND COLLABORATION LABORATORY PTE LTD0 citations57