P

Inventor

KIM WEON-HONG

KR52 patents
⚠️ This page may combine multiple inventors who share the name “KIM WEON-HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

42 patents
US9029244B2May 12, 2015

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

SAMSUNG ELECTRONICS CO LTD417 citations99
US7394641B2Jul 1, 2008

MEMS tunable capacitor with a wide tuning range

SAMSUNG ELECTRONICS CO LTD15 citations92
US7232492B2Jun 19, 2007

Method of forming thin film for improved productivity

SAMSUNG ELECTRONICS CO LTD23 citations92
US7091548B2Aug 15, 2006

Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD35 citations92
US7002788B2Feb 21, 2006

Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD27 citations92
US9859392B2Jan 2, 2018

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7704867B2Apr 27, 2010

Method of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD14 citations84
US7491654B2Feb 17, 2009

Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film

SAMSUNG ELECTRONICS CO LTD11 citations84
US7476922B2Jan 13, 2009

Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US7125767B2Oct 24, 2006

Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD15 citations84
US7508649B2Mar 24, 2009

Multi-layered dielectric film of microelectronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US9218977B2Dec 22, 2015

Fabricating method of a semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations73
US8796087B2Aug 5, 2014

Method of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations73
US7203052B2Apr 10, 2007

Method of fabricating MEMS tunable capacitor with wide tuning range

SAMSUNG ELECTRONICS CO LTD5 citations73
US7042698B2May 9, 2006

MEMS tunable capacitor with a wide tuning range and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations73
US10879392B2Dec 29, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations71
US9779996B2Oct 3, 2017

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations70
US9702041B2Jul 11, 2017

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

SAMSUNG ELECTRONICS CO LTD1 citations63
US8940611B2Jan 27, 2015

Semiconductor integrated circuit device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7855431B2Dec 21, 2010

Capacitor unit and method of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7732296B2Jun 8, 2010

Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method

SAMSUNG ELECTRONICS CO LTD4 citations63
US7435654B2Oct 14, 2008

Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7407897B2Aug 5, 2008

Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7316961B2Jan 8, 2008

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations63
US11949012B2Apr 2, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations61
US8963227B2Feb 24, 2015

Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations61
US10312341B2Jun 4, 2019

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9431515B2Aug 30, 2016

Methods of forming semiconductor devices, including performing a heat treatment after forming a metal layer and a high-k layer

SAMSUNG ELECTRONICS CO LTD1 citations52
US9406502B2Aug 2, 2016

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

SAMSUNG ELECTRONICS CO LTD0 citations52
US9275993B2Mar 1, 2016

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US8975171B1Mar 10, 2015

Method of forming a high-k crystalline dielectric

SAMSUNG ELECTRONICS CO LTD0 citations52
US7977257B2Jul 12, 2011

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD1 citations52
US7807584B2Oct 5, 2010

Method of forming metallic oxide films using atomic layer deposition

SAMSUNG ELECTRONICS CO LTD0 citations52
US7679124B2Mar 16, 2010

Analog capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7612399B2Nov 3, 2009

Semiconductor integrated circuit devices

SAMSUNG ELECTRONICS CO LTD1 citations52
US7581550B2Sep 1, 2009

Method of cleaning reaction chamber using substrate having catalyst layer thereon

SAMSUNG ELECTRONICS CO LTD0 citations52
US7563672B2Jul 21, 2009

Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors

SAMSUNG ELECTRONICS CO LTD1 citations52
US7166541B2Jan 23, 2007

Method of forming dielectric layer using plasma enhanced atomic layer deposition technique

SAMSUNG ELECTRONICS CO LTD0 citations52
US9023718B2May 5, 2015

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US7708969B2May 4, 2010

Method of forming metal oxide

SAMSUNG ELECTRONICS CO LTD1 citations50
US9922879B2Mar 20, 2018

Integrated circuit devices

SAMSUNG ELECTRONICS CO LTD1 citations49
US9698021B2Jul 4, 2017

Deposition methods of forming a layer while rotating the substrate in angular increments and methods of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD0 citations49

LIM HA-JIN

3 patents

KIM WEON-HONG

3 patents

DO JIN-HO

1 patent

PARK PAN-KWI

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.