Inventor
KIM WEON-HONG
KR52 patents
⚠️ This page may combine multiple inventors who share the name “KIM WEON-HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
42 patentsUS9029244B2May 12, 2015
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
SAMSUNG ELECTRONICS CO LTD417 citations99
US7394641B2Jul 1, 2008
MEMS tunable capacitor with a wide tuning range
SAMSUNG ELECTRONICS CO LTD15 citations92
US7232492B2Jun 19, 2007
Method of forming thin film for improved productivity
SAMSUNG ELECTRONICS CO LTD23 citations92
US7091548B2Aug 15, 2006
Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations92
US7002788B2Feb 21, 2006
Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD27 citations92
US9859392B2Jan 2, 2018
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7704867B2Apr 27, 2010
Method of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD14 citations84
US7491654B2Feb 17, 2009
Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film
SAMSUNG ELECTRONICS CO LTD11 citations84
US7476922B2Jan 13, 2009
Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations84
US7125767B2Oct 24, 2006
Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7508649B2Mar 24, 2009
Multi-layered dielectric film of microelectronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US9218977B2Dec 22, 2015
Fabricating method of a semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US8796087B2Aug 5, 2014
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US7203052B2Apr 10, 2007
Method of fabricating MEMS tunable capacitor with wide tuning range
SAMSUNG ELECTRONICS CO LTD5 citations73
US7042698B2May 9, 2006
MEMS tunable capacitor with a wide tuning range and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations73
US10879392B2Dec 29, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations71
US9779996B2Oct 3, 2017
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US9702041B2Jul 11, 2017
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
SAMSUNG ELECTRONICS CO LTD1 citations63
US8940611B2Jan 27, 2015
Semiconductor integrated circuit device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7855431B2Dec 21, 2010
Capacitor unit and method of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7732296B2Jun 8, 2010
Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method
SAMSUNG ELECTRONICS CO LTD4 citations63
US7435654B2Oct 14, 2008
Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7407897B2Aug 5, 2008
Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7316961B2Jan 8, 2008
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations63
US11949012B2Apr 2, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US8963227B2Feb 24, 2015
Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US10312341B2Jun 4, 2019
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9431515B2Aug 30, 2016
Methods of forming semiconductor devices, including performing a heat treatment after forming a metal layer and a high-k layer
SAMSUNG ELECTRONICS CO LTD1 citations52
US9406502B2Aug 2, 2016
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
SAMSUNG ELECTRONICS CO LTD0 citations52
US9275993B2Mar 1, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8975171B1Mar 10, 2015
Method of forming a high-k crystalline dielectric
SAMSUNG ELECTRONICS CO LTD0 citations52
US7977257B2Jul 12, 2011
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations52
US7807584B2Oct 5, 2010
Method of forming metallic oxide films using atomic layer deposition
SAMSUNG ELECTRONICS CO LTD0 citations52
US7679124B2Mar 16, 2010
Analog capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7612399B2Nov 3, 2009
Semiconductor integrated circuit devices
SAMSUNG ELECTRONICS CO LTD1 citations52
US7581550B2Sep 1, 2009
Method of cleaning reaction chamber using substrate having catalyst layer thereon
SAMSUNG ELECTRONICS CO LTD0 citations52
US7563672B2Jul 21, 2009
Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors
SAMSUNG ELECTRONICS CO LTD1 citations52
US7166541B2Jan 23, 2007
Method of forming dielectric layer using plasma enhanced atomic layer deposition technique
SAMSUNG ELECTRONICS CO LTD0 citations52
US9023718B2May 5, 2015
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7708969B2May 4, 2010
Method of forming metal oxide
SAMSUNG ELECTRONICS CO LTD1 citations50
US9922879B2Mar 20, 2018
Integrated circuit devices
SAMSUNG ELECTRONICS CO LTD1 citations49
US9698021B2Jul 4, 2017
Deposition methods of forming a layer while rotating the substrate in angular increments and methods of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations49
LIM HA-JIN
3 patentsUS8476155B1Jul 2, 2013
Formation of a high-K crystalline dielectric composition
LIM HA-JIN12 citations83
US8563411B2Oct 22, 2013
Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same
LIM HA-JIN4 citations60
US8455345B2Jun 4, 2013
Methods of forming gate structure and methods of manufacturing semiconductor device including the same
LIM HA-JIN0 citations50
KIM WEON-HONG
3 patentsUS9318335B2Apr 19, 2016
Method for fabricating semiconductor device including nitrided gate insulator
KIM WEON-HONG9 citations82
US8809999B2Aug 19, 2014
Semiconductor integrated circuit device and method of fabricating the same
KIM WEON-HONG0 citations50
US8471359B2Jun 25, 2013
Semiconductor device and method of fabricating the same
KIM WEON-HONG1 citations50
DO JIN-HO
1 patentPARK PAN-KWI
1 patentShowing the top 50 of 52 patents by PatentIndex Score.