Inventor

WANG CHENCHEN JACOB

SG42 patents

⚠️ This page may combine multiple inventors who share the name “WANG CHENCHEN JACOB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG CHENCHEN JACOB

TAIWAN SEMICONDUCTOR MFG CO LTD

Memory array word line routing

Memory array word line routing

Three-dimensional memory

Three-dimensional memory and fabricating method thereof

Memory device, integrated circuit device and method

Memory device, integrated circuit device and method

System-on-chip with ferroelectric random access memory and tunable capacitor

Semiconductor devices including ferroelectric memory and methods of forming the same

Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same

Semiconductor device and manufacturing method thereof

Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the same

Method for fabricating three-dimensional memory

Memory device and methods of forming same

Memory device, and integrated circuit device

Device structure including field effect transistors and ferroelectric capacitors

Memory device and methods of forming same

Multi-level magnetic tunnel junction nor device with wrap-around gate electrodes and methods for forming the same

Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same

Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the same

Semiconductor memory structure and method for forming the same

Semiconductor structure and manufacturing method thereof

Backside memory integration

Magnetic device structure and methods of forming the same

Magnetic device structure and methods of forming the same

Memory device and method of forming the same

System-on-chip with ferroelectric random access memory and tunable capacitor

Three-dimensional memory device with ferroelectric material

Three-dimensional memory device with ferroelectric material

Semiconductor memory structure and device

Semiconductor structure and method for manufacturing thereof

GLOBALFOUNDRIES SG PTE LTD

MRAM with metal-insulator-transition material

Integration of spintronic devices with memory device

Integrated circuits with memory cell test circuits and methods for producing the same

Magnetic memory cells with fast read/write speed

Storage layer for magnetic memory with high thermal stability

High thermal budget magnetic memory

Storage layer for magnetic memory with high thermal stability

Shielded MRAM cell

Methods of shielding an embedded MRAM array on an integrated circuit product comprising CMOS based transistors

Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the same

Magnetic random access memory structures, integrated circuits, and methods for fabricating the same

Integrated circuits with magnetic tunnel junctions and methods for fabricating the same