Inventor

LIBBERT JEFFREY L

US52 patents

⚠️ This page may combine multiple inventors who share the name “LIBBERT JEFFREY L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIBBERT JEFFREY L

GLOBALWAFERS CO LTD

Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability

Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability

Methods for assessing semiconductor structures

High resistivity silicon-on-insulator substrate comprising an isolation region

High resistivity semiconductor-on-insulator wafer and a method of manufacture

Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate

Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate

High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency

High resistivity semiconductor-on-insulator wafer and a method of manufacturing

Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability

Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency

Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate

Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress

High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency

Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress

SUNEDISON SEMICONDUCTOR LTD UEN201334164H

Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress

Methods for cleaving a bonded wafer structure

High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency

Clamping apparatus for cleaving a bonded wafer structure and methods for cleaving

High resistivity semiconductor-on-insulator wafer and a method of manufacturing

Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers

High resistivity silicon-on-insulator substrate comprising an isolation region

High resistivity silicon-on-insulator substrate comprising an isolation region

Methods for assessing semiconductor structures

Method of manufacture of a semiconductor on insulator structure

Method of manufacture of a semiconductor on insulator structure

Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers

MEMC ELECTRONIC MATERIALS

Control of oxygen precipitate formation in high resistivity CZ silicon

Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults

Method for controlling of thermal donor formation in high resistivity CZ silicon

Process for producing silicon on insulator structure having intrinsic gettering by ion implantation

Process for making silicon wafers with stabilized oxygen precipitate nucleation centers

Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same

Silicon on insulator structure having an epitaxial layer and intrinsic gettering

Method for producing czochralski silicon free of agglomerated self-interstitial defects

LIBBERT JEFFREY L

Methods for producing silicon on insulator structures having high resistivity regions in the handle wafer

Methods for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing

Method to delineate crystal related defects

Methods for monitoring the amount of metal contamination in a process

SUNEDISON INC

Semiconductor-on-insulator wafer manufacturing method for reducing light point defects and surface roughness

Method for low temperature layer transfer in the preparation of multilayer semiconductor devices

SUNEDISON SEMICONDUCTOR LTD

High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface

Clamping apparatus for cleaving a bonded wafer structure

MEMC ELECTRONICS MATERIALS INC

Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults

SUNEDISON SEMICONDUCTOR LTD (UEN201334164H)

Process flow for manufacturing semiconductor on insulator structures in parallel

RIES MICHAEL JOHN

Systems and methods for cleaving a bonded wafer pair

ZHANG GUOQIANG

Method of manufacturing silicon-on-insulator wafers