Inventor
WEEKS JR T WARREN
US32 patents
⚠️ This page may combine multiple inventors who share the name “WEEKS JR T WARREN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HUBBELL INC
14 patentsUS9538604B2Jan 3, 2017
Current splitter for LED lighting system
HUBBELL INC22 citations91
US10767843B2Sep 8, 2020
Antimicrobial light source array system
HUBBELL INC9 citations82
US10190759B2Jan 29, 2019
Circuit boards for LED-based light fixtures
HUBBELL INC6 citations81
US9970639B2May 15, 2018
Circuit boards for LED-based light fixtures
HUBBELL INC7 citations81
US9763298B2Sep 12, 2017
Voltage balancing current controlled LED circuit
HUBBELL INC13 citations81
US9907134B2Feb 27, 2018
Toggle control for lighting system
HUBBELL INC2 citations73
US10912173B2Feb 2, 2021
Toggle control for lighting system
HUBBELL INC0 citations62
US9723683B2Aug 1, 2017
Current splitter for LED lighting system
HUBBELL INC1 citations62
US10051706B2Aug 14, 2018
Current splitter for LED lighting system
HUBBELL INC1 citations60
US9844112B2Dec 12, 2017
Current splitter for LED lighting system
HUBBELL INC1 citations60
US10524324B2Dec 31, 2019
LED lighting fixture and adjustment of color temperature thereof based at least in part on detected toggle input
HUBBELL INC0 citations52
US10187951B2Jan 22, 2019
Toggle control for lighting system
HUBBELL INC0 citations52
US10317284B2Jun 11, 2019
Systems and methods for testing and characterizing LED lighting devices
HUBBELL INC0 citations51
US10009972B2Jun 26, 2018
Multiphase light fixture
HUBBELL INC1 citations47
INT RECTIFIER CORP
6 patentsUS9064775B2Jun 23, 2015
Gallium nitride semiconductor structures with compositionally-graded transition layer
INT RECTIFIER CORP29 citations98
US8592862B2Nov 26, 2013
Gallium nitride semiconductor structures with compositionally-graded transition layer
INT RECTIFIER CORP18 citations96
US8937335B2Jan 20, 2015
Gallium nitride devices with aluminum nitride intermediate layer
INT RECTIFIER CORP12 citations92
US8928035B2Jan 6, 2015
Gallium nitride devices with gallium nitride alloy intermediate layer
INT RECTIFIER CORP9 citations92
US8928034B2Jan 6, 2015
Gallium nitride devices with aluminum nitride alloy intermediate layer
INT RECTIFIER CORP11 citations92
US8344417B2Jan 1, 2013
Gallium nitride semiconductor structures with compositionally-graded transition layer
INT RECTIFIER CORP16 citations92
INFINEON TECHNOLOGIES AMERICAS CORP
4 patentsUS10177229B2Jan 8, 2019
Semiconductor material having a compositionally-graded transition layer
INFINEON TECHNOLOGIES AMERICAS CORP5 citations84
US9461119B2Oct 4, 2016
Semiconductor structure with compositionally-graded transition layer
INFINEON TECHNOLOGIES AMERICAS CORP4 citations84
US9437687B2Sep 6, 2016
III-nitride based semiconductor structure
INFINEON TECHNOLOGIES AMERICAS CORP5 citations84
US9437686B2Sep 6, 2016
Gallium nitride devices with discontinuously graded transition layer
INFINEON TECHNOLOGIES AMERICAS CORP4 citations84
CREE INC
3 patentsUS7364988B2Apr 29, 2008
Method of manufacturing gallium nitride based high-electron mobility devices
CREE INC87 citations98
US7326971B2Feb 5, 2008
Gallium nitride based high-electron mobility devices
CREE INC93 citations98
US7485512B2Feb 3, 2009
Method of manufacturing an adaptive AIGaN buffer layer
CREE INC15 citations81