Inventor
JUNG WON-TAECK
KR31 patents
⚠️ This page may combine multiple inventors who share the name “JUNG WON-TAECK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
26 patentsUS10541033B2Jan 21, 2020
Non-volatile memory device and memory system including the same and program method thereof
SAMSUNG ELECTRONICS CO LTD17 citations94
US11200955B2Dec 14, 2021
Non-volatile memory device and memory system including the same and program method thereof
SAMSUNG ELECTRONICS CO LTD5 citations84
US10497444B2Dec 3, 2019
Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
SAMSUNG ELECTRONICS CO LTD4 citations84
US10043580B2Aug 7, 2018
Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
SAMSUNG ELECTRONICS CO LTD7 citations84
US9799400B2Oct 24, 2017
Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
SAMSUNG ELECTRONICS CO LTD7 citations84
US9449699B2Sep 20, 2016
Nonvolatile memory and erasing method thereof
SAMSUNG ELECTRONICS CO LTD5 citations84
US9418749B2Aug 16, 2016
Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
SAMSUNG ELECTRONICS CO LTD8 citations84
US9412456B2Aug 9, 2016
Nonvolatile memory device, programming method of nonvolatile memory device and memory system including nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD6 citations84
US9281070B2Mar 8, 2016
Nonvolatile memory and erasing method thereof
SAMSUNG ELECTRONICS CO LTD4 citations84
US9570176B2Feb 14, 2017
Nonvolatile memory device, storage device having the same, operating method thereof
SAMSUNG ELECTRONICS CO LTD15 citations83
US11594283B2Feb 28, 2023
Non-volatile memory device and memory system including the same and program method thereof
SAMSUNG ELECTRONICS CO LTD2 citations73
US11222697B2Jan 11, 2022
Three-dimensional nonvolatile memory and method of performing read operation in the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD4 citations73
US10839910B2Nov 17, 2020
Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
SAMSUNG ELECTRONICS CO LTD1 citations73
US12094540B2Sep 17, 2024
Non-volatile memory device and memory system including the same and program method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US12033707B2Jul 9, 2024
Nonvolatile memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US12002514B2Jun 4, 2024
Nonvolatile memory and storage device including same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11651829B2May 16, 2023
Nonvolatile memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US10803947B2Oct 13, 2020
Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
SAMSUNG ELECTRONICS CO LTD0 citations52
US9552884B2Jan 24, 2017
Nonvolatile memory and erasing method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US12531122B2Jan 20, 2026
Operation method of memory device including memory block connected to wordlines
SAMSUNG ELECTRONICS CO LTD0 citations51
US11742052B2Aug 29, 2023
Nonvolatile memory device and storage device including nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11625302B2Apr 11, 2023
Nonvolatile memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US12488856B2Dec 2, 2025
Memory device, operation method of memory device, and operation method of test device configured to test memory device
SAMSUNG ELECTRONICS CO LTD0 citations47
US11450389B2Sep 20, 2022
Non-volatile memory device and an operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations47
US10770148B2Sep 8, 2020
Nonvolatile memory device and operating method of the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US10403363B2Sep 3, 2019
Nonvolatile memory and storage device including nonvolatile memory
SAMSUNG ELECTRONICS CO LTD0 citations42