Inventor
WU GUANPING
CN29 patents
⚠️ This page may combine multiple inventors who share the name “WU GUANPING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
20 patentsUS10553604B2Feb 4, 2020
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD31 citations97
US10593690B2Mar 17, 2020
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD21 citations94
US11785776B2Oct 10, 2023
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD6 citations85
US10923491B2Feb 16, 2021
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD4 citations84
US10910397B2Feb 2, 2021
Through array contact structure of three- dimensional memory device
YANGTZE MEMORY TECH CO LTD5 citations83
US11758732B2Sep 12, 2023
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations73
US11527547B2Dec 13, 2022
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations73
US11956953B2Apr 9, 2024
Joint opening structures of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD1 citations72
US11545505B2Jan 3, 2023
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US11410983B2Aug 9, 2022
Three-dimensional memory device and fabrication method thereof
YANGTZE MEMORY TECH CO LTD2 citations72
US10886291B2Jan 5, 2021
Joint opening structures of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD2 citations72
US10867983B2Dec 15, 2020
Three-dimensional memory device and fabrication method thereof
YANGTZE MEMORY TECH CO LTD1 citations72
US10541249B2Jan 21, 2020
Three-dimensional memory devices and fabricating methods thereof
YANGTZE MEMORY TECH CO LTD2 citations71
US10790297B2Sep 29, 2020
Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer
YANGTZE MEMORY TECH CO LTD4 citations68
US12185550B2Dec 31, 2024
Through array contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12137568B2Nov 5, 2024
Hybrid bonding contact structure of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11728326B2Aug 15, 2023
Three-dimensional memory device and fabrication method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11482532B2Oct 25, 2022
Joint opening structures of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11437400B2Sep 6, 2022
Three-dimensional memory device and fabricating method thereof
YANGTZE MEMORY TECH CO LTD0 citations61
US10797067B2Oct 6, 2020
Three-dimensional memory device and fabricating method thereof
YANGTZE MEMORY TECH CO LTD0 citations50
ZHANG CHAO
3 patentsUS8476085B1Jul 2, 2013
Method of fabricating dual trench isolated epitaxial diode array
ZHANG CHAO14 citations81
US8586405B2Nov 19, 2013
Semiconductor device manufacturing method
ZHANG CHAO1 citations51
US9334583B2May 10, 2016
Method of preventing auto-doping during epitaxial layer growth by cleaning the reaction chamber with hydrogen chloride
ZHANG CHAO1 citations49
SEMICONDUCTOR MFG INT SHANGHAI
3 patentsUS9006022B2Apr 14, 2015
Method for fabricating phase change memory
SEMICONDUCTOR MFG INT SHANGHAI2 citations58
US9373784B2Jun 21, 2016
Semiconductor memory device and manufacturing method thereof
SEMICONDUCTOR MFG INT SHANGHAI0 citations49
US9136469B2Sep 15, 2015
Phase change memories
SEMICONDUCTOR MFG INT SHANGHAI0 citations48