P

Inventor

WU GUANPING

CN29 patents
⚠️ This page may combine multiple inventors who share the name “WU GUANPING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

20 patents
US10553604B2Feb 4, 2020

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD31 citations97
US10593690B2Mar 17, 2020

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD21 citations94
US11785776B2Oct 10, 2023

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD6 citations85
US10923491B2Feb 16, 2021

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD4 citations84
US10910397B2Feb 2, 2021

Through array contact structure of three- dimensional memory device

YANGTZE MEMORY TECH CO LTD5 citations83
US11758732B2Sep 12, 2023

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD3 citations73
US11527547B2Dec 13, 2022

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD3 citations73
US11956953B2Apr 9, 2024

Joint opening structures of three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations72
US11545505B2Jan 3, 2023

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD1 citations72
US11410983B2Aug 9, 2022

Three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD2 citations72
US10886291B2Jan 5, 2021

Joint opening structures of three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD2 citations72
US10867983B2Dec 15, 2020

Three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD1 citations72
US10541249B2Jan 21, 2020

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD2 citations71
US10790297B2Sep 29, 2020

Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer

YANGTZE MEMORY TECH CO LTD4 citations68
US12185550B2Dec 31, 2024

Through array contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US12137568B2Nov 5, 2024

Hybrid bonding contact structure of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US11728326B2Aug 15, 2023

Three-dimensional memory device and fabrication method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11482532B2Oct 25, 2022

Joint opening structures of three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11437400B2Sep 6, 2022

Three-dimensional memory device and fabricating method thereof

YANGTZE MEMORY TECH CO LTD0 citations61
US10797067B2Oct 6, 2020

Three-dimensional memory device and fabricating method thereof

YANGTZE MEMORY TECH CO LTD0 citations50

ZHANG CHAO

3 patents

SEMICONDUCTOR MFG INT SHANGHAI

3 patents

SEMICONDUCTOR MFG INT CORP

2 patents

SEMICONDUCTOR MFG INT SHANGHAI CORP

1 patent