P

Inventor

KOCON CHRISTOPHER BOGUSLAW

US80 patents
⚠️ This page may combine multiple inventors who share the name “KOCON CHRISTOPHER BOGUSLAW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FAIRCHILD SEMICONDUCTOR

22 patents
US7504303B2Mar 17, 2009

Trench-gate field effect transistors and methods of forming the same

FAIRCHILD SEMICONDUCTOR94 citations99
US6677641B2Jan 13, 2004

Semiconductor structure with improved smaller forward voltage loss and higher blocking capability

FAIRCHILD SEMICONDUCTOR240 citations99
US7319256B1Jan 15, 2008

Shielded gate trench FET with the shield and gate electrodes being connected together

FAIRCHILD SEMICONDUCTOR105 citations98
US7473603B2Jan 6, 2009

Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together

FAIRCHILD SEMICONDUCTOR37 citations96
US7368777B2May 6, 2008

Accumulation device with charge balance structure and method of forming the same

FAIRCHILD SEMICONDUCTOR49 citations96
US7132712B2Nov 7, 2006

Trench structure having one or more diodes embedded therein adjacent a PN junction

FAIRCHILD SEMICONDUCTOR53 citations95
US7473976B2Jan 6, 2009

Lateral power transistor with self-biasing electrodes

FAIRCHILD SEMICONDUCTOR18 citations93
US7061066B2Jun 13, 2006

Schottky diode using charge balance structure

FAIRCHILD SEMICONDUCTOR21 citations93
US6991977B2Jan 31, 2006

Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability

FAIRCHILD SEMICONDUCTOR31 citations93
US6534828B1Mar 18, 2003

Integrated circuit device including a deep well region and associated methods

FAIRCHILD SEMICONDUCTOR26 citations93
US9368587B2Jun 14, 2016

Accumulation-mode field effect transistor with improved current capability

FAIRCHILD SEMICONDUCTOR12 citations92
US8043913B2Oct 25, 2011

Method of forming trench-gate field effect transistors

FAIRCHILD SEMICONDUCTOR13 citations92
US7923776B2Apr 12, 2011

Trench-gate field effect transistor with channel enhancement region and methods of forming the same

FAIRCHILD SEMICONDUCTOR19 citations92
US7859047B2Dec 28, 2010

Shielded gate trench FET with the shield and gate electrodes connected together in non-active region

FAIRCHILD SEMICONDUCTOR34 citations92
US7582519B2Sep 1, 2009

Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction

FAIRCHILD SEMICONDUCTOR31 citations92
US7265415B2Sep 4, 2007

MOS-gated transistor with reduced miller capacitance

FAIRCHILD SEMICONDUCTOR20 citations92
US7595542B2Sep 29, 2009

Periphery design for charge balance power devices

FAIRCHILD SEMICONDUCTOR31 citations91
US8884365B2Nov 11, 2014

Trench-gate field effect transistor

FAIRCHILD SEMICONDUCTOR4 citations84
US7592668B2Sep 22, 2009

Charge balance techniques for power devices

FAIRCHILD SEMICONDUCTOR10 citations84
US7452777B2Nov 18, 2008

Self-aligned trench MOSFET structure and method of manufacture

FAIRCHILD SEMICONDUCTOR19 citations83
US7560787B2Jul 14, 2009

Trench field plate termination for power devices

FAIRCHILD SEMICONDUCTOR7 citations74
US7534683B2May 19, 2009

Method of making a MOS-gated transistor with reduced miller capacitance

FAIRCHILD SEMICONDUCTOR6 citations74

TEXAS INSTRUMENTS INC

20 patents
US9299830B1Mar 29, 2016

Multiple shielding trench gate fet

TEXAS INSTRUMENTS INC30 citations94
US8748976B1Jun 10, 2014

Dual RESURF trench field plate in vertical MOSFET

TEXAS INSTRUMENTS INC48 citations93
US9136381B1Sep 15, 2015

Super junction MOSFET with integrated channel diode

TEXAS INSTRUMENTS INC21 citations92
US9356133B2May 31, 2016

Medium voltage MOSFET device

TEXAS INSTRUMENTS INC5 citations84
US9318598B2Apr 19, 2016

Trench MOSFET having reduced gate charge

TEXAS INSTRUMENTS INC9 citations82
US10741684B2Aug 11, 2020

Integrated channel diode

TEXAS INSTRUMENTS INC1 citations73
US10256337B2Apr 9, 2019

Power transistor with terminal trenches in terminal resurf regions

TEXAS INSTRUMENTS INC2 citations73
US9881995B2Jan 30, 2018

MOSFET having dual-gate cells with an integrated channel diode

TEXAS INSTRUMENTS INC3 citations73
US9711639B2Jul 18, 2017

Multiple shielding trench gate FET

TEXAS INSTRUMENTS INC3 citations73
US9601612B2Mar 21, 2017

MOSFET having dual-gate cells with an integrated channel diode

TEXAS INSTRUMENTS INC2 citations73
US9324856B2Apr 26, 2016

MOSFET having dual-gate cells with an integrated channel diode

TEXAS INSTRUMENTS INC4 citations73
US9230851B2Jan 5, 2016

Reduction of polysilicon residue in a trench for polysilicon trench filling processes

TEXAS INSTRUMENTS INC4 citations73
US9905638B1Feb 27, 2018

Silicon epitaxy for high aspect ratio, substantially perpendicular deep silicon trench

TEXAS INSTRUMENTS INC6 citations72
US9905428B2Feb 27, 2018

Split-gate lateral extended drain MOS transistor structure and process

TEXAS INSTRUMENTS INC5 citations72
US9076671B2Jul 7, 2015

Power integrated circuit including series-connected source substrate and drain substrate power mosfets

TEXAS INSTRUMENTS INC4 citations72
US9583611B2Feb 28, 2017

Trench MOSFET having reduced gate charge

TEXAS INSTRUMENTS INC3 citations71
US9496388B2Nov 15, 2016

Trench MOSFET having reduced gate charge

TEXAS INSTRUMENTS INC3 citations71
US12009421B2Jun 11, 2024

Semiconductor on insulator on wide band-gap semiconductor

TEXAS INSTRUMENTS INC0 citations63
US11621347B2Apr 4, 2023

Drain extended transistor with trench gate

TEXAS INSTRUMENTS INC0 citations63
US11569378B2Jan 31, 2023

Semiconductor on insulator on wide band-gap semiconductor

TEXAS INSTRUMENTS INC0 citations63

KOCON CHRISTOPHER BOGUSLAW

4 patents

TEXAS INSTR LEHIGH VALLEY INC

1 patent

GREBS THOMAS E

1 patent

CICLON SEMICONDUCTOR DEVICE CO

1 patent

KOREC JACEK

1 patent

Showing the top 50 of 80 patents by PatentIndex Score.