P

Inventor

XIA JI

CN37 patents
⚠️ This page may combine multiple inventors who share the name “XIA JI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

28 patents
US11133325B2Sep 28, 2021

Memory cell structure of a three-dimensional memory device

YANGTZE MEMORY TECH CO LTD14 citations93
US10566336B1Feb 18, 2020

Three-dimensional memory devices having through array contacts and methods for forming the same

YANGTZE MEMORY TECH CO LTD11 citations93
US11271007B2Mar 8, 2022

Three-dimensional memory and fabrication method thereof

YANGTZE MEMORY TECH CO LTD3 citations73
US11211394B2Dec 28, 2021

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD3 citations73
US11716846B2Aug 1, 2023

Three-dimensional memory devices having through stair contacts and methods for forming the same

YANGTZE MEMORY TECH CO LTD2 citations72
US11532636B2Dec 20, 2022

Three-dimensional memory devices having through array contacts and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations72
US10847528B2Nov 24, 2020

Memory cell structure of a three-dimensional memory device

YANGTZE MEMORY TECH CO LTD1 citations72
US10847539B2Nov 24, 2020

Three-dimensional memory devices having through stair contacts and methods for forming the same

YANGTZE MEMORY TECH CO LTD4 citations72
US10644015B2May 5, 2020

Memory cell structure of a three-dimensional memory device

YANGTZE MEMORY TECH CO LTD3 citations72
US10825929B2Nov 3, 2020

Structures and methods for reducing stress in three-dimensional memory device

YANGTZE MEMORY TECH CO LTD3 citations70
US12063780B2Aug 13, 2024

Memory cell structure of a three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations62
US12052871B2Jul 30, 2024

Three-dimensional memory and fabrication method thereof

YANGTZE MEMORY TECH CO LTD1 citations62
US11805650B2Oct 31, 2023

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11785772B2Oct 10, 2023

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11690219B2Jun 27, 2023

Three-dimensional memory devices having through array contacts and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11653495B2May 16, 2023

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11581322B2Feb 14, 2023

Three-dimensional memory devices having through array contacts and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11437398B2Sep 6, 2022

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11127757B2Sep 21, 2021

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11101286B2Aug 24, 2021

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11049866B2Jun 29, 2021

Three-dimensional memory devices having through array contacts and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12035530B2Jul 9, 2024

Three-dimensional memory devices having through stair contacts and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations61
US11792980B2Oct 17, 2023

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations61
US11411014B2Aug 9, 2022

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations61
US11195853B2Dec 7, 2021

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations61
US10763099B2Sep 1, 2020

Wafer flatness control using backside compensation structure

YANGTZE MEMORY TECH CO LTD1 citations61
US11450770B2Sep 20, 2022

Structures and methods for reducing stress in three-dimensional memory device

YANGTZE MEMORY TECH CO LTD0 citations60
US10879254B2Dec 29, 2020

Three-dimensional memory devices having through array contacts and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations51

SHENZHEN JIUHU TECH CO LIMITED

4 patents

SHENZHEN JIUHU TECH CO LTD

2 patents

HUAWEI TECH CO LTD

2 patents

CHINA UNIONPAY CO LTD

1 patent