Inventor
XIA JI
CN37 patents
⚠️ This page may combine multiple inventors who share the name “XIA JI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
28 patentsUS11133325B2Sep 28, 2021
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD14 citations93
US10566336B1Feb 18, 2020
Three-dimensional memory devices having through array contacts and methods for forming the same
YANGTZE MEMORY TECH CO LTD11 citations93
US11271007B2Mar 8, 2022
Three-dimensional memory and fabrication method thereof
YANGTZE MEMORY TECH CO LTD3 citations73
US11211394B2Dec 28, 2021
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD3 citations73
US11716846B2Aug 1, 2023
Three-dimensional memory devices having through stair contacts and methods for forming the same
YANGTZE MEMORY TECH CO LTD2 citations72
US11532636B2Dec 20, 2022
Three-dimensional memory devices having through array contacts and methods for forming the same
YANGTZE MEMORY TECH CO LTD1 citations72
US10847528B2Nov 24, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations72
US10847539B2Nov 24, 2020
Three-dimensional memory devices having through stair contacts and methods for forming the same
YANGTZE MEMORY TECH CO LTD4 citations72
US10644015B2May 5, 2020
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations72
US10825929B2Nov 3, 2020
Structures and methods for reducing stress in three-dimensional memory device
YANGTZE MEMORY TECH CO LTD3 citations70
US12063780B2Aug 13, 2024
Memory cell structure of a three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US12052871B2Jul 30, 2024
Three-dimensional memory and fabrication method thereof
YANGTZE MEMORY TECH CO LTD1 citations62
US11805650B2Oct 31, 2023
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11785772B2Oct 10, 2023
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11690219B2Jun 27, 2023
Three-dimensional memory devices having through array contacts and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11653495B2May 16, 2023
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11581322B2Feb 14, 2023
Three-dimensional memory devices having through array contacts and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11437398B2Sep 6, 2022
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11127757B2Sep 21, 2021
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11101286B2Aug 24, 2021
Three-dimensional memory device with source structure and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11049866B2Jun 29, 2021
Three-dimensional memory devices having through array contacts and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12035530B2Jul 9, 2024
Three-dimensional memory devices having through stair contacts and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations61
US11792980B2Oct 17, 2023
Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations61
US11411014B2Aug 9, 2022
Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations61
US11195853B2Dec 7, 2021
Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations61
US10763099B2Sep 1, 2020
Wafer flatness control using backside compensation structure
YANGTZE MEMORY TECH CO LTD1 citations61
US11450770B2Sep 20, 2022
Structures and methods for reducing stress in three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations60
US10879254B2Dec 29, 2020
Three-dimensional memory devices having through array contacts and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations51
SHENZHEN JIUHU TECH CO LIMITED
4 patentsUSD919603SMay 18, 2021
Headphone
SHENZHEN JIUHU TECH CO LIMITED49 citations97
USD860161SSep 17, 2019
Foldable headphone
SHENZHEN JIUHU TECH CO LIMITED59 citations97
USD974325SJan 3, 2023
Headphone
SHENZHEN JIUHU TECH CO LIMITED22 citations93
USD1092435SSep 9, 2025
Headphones
SHENZHEN JIUHU TECH CO LIMITED0 citations62