Inventor
TAKASHIMA SHINYA
JP26 patents
⚠️ This page may combine multiple inventors who share the name “TAKASHIMA SHINYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
22 patentsUS9754783B2Sep 5, 2017
Method for producing a semiconductor device, and semiconductor device
FUJI ELECTRIC CO LTD4 citations73
US10903352B2Jan 26, 2021
Manufacturing method of vertical GaN-based semiconductor device and vertical GaN-based semiconductor device
FUJI ELECTRIC CO LTD4 citations72
US10256292B2Apr 9, 2019
Vertical MOSFET
FUJI ELECTRIC CO LTD2 citations72
US10121876B2Nov 6, 2018
Method for high temperature annealing of a nitride semiconductor layer
FUJI ELECTRIC CO LTD2 citations72
US10181514B2Jan 15, 2019
Vertical semiconductor device and manufacturing method thereof
FUJI ELECTRIC CO LTD2 citations70
US11862687B2Jan 2, 2024
Nitride semiconductor device and method for fabricating nitride semiconductor device
FUJI ELECTRIC CO LTD1 citations62
US10749003B2Aug 18, 2020
Manufacturing method of semiconductor device and semiconductor device
FUJI ELECTRIC CO LTD1 citations62
US10170564B2Jan 1, 2019
Manufacturing method of semiconductor device and semiconductor device
FUJI ELECTRIC CO LTD1 citations62
US11062907B2Jul 13, 2021
Nitride semiconductor device
FUJI ELECTRIC CO LTD0 citations61
US11257676B2Feb 22, 2022
Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device
FUJI ELECTRIC CO LTD1 citations58
US12527030B2Jan 13, 2026
Nitride semiconductor device
FUJI ELECTRIC CO LTD0 citations57
US12563791B2Feb 24, 2026
Nitride semiconductor device and method for manufacturing nitride semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US11862686B2Jan 2, 2024
Nitride semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US10615293B2Apr 7, 2020
Diode and method of manufacturing diode
FUJI ELECTRIC CO LTD0 citations52
US9805930B2Oct 31, 2017
Method of manufacturing nitride semiconductor device using laminated cap layers
FUJI ELECTRIC CO LTD0 citations52
US10141192B2Nov 27, 2018
Manufacturing method of semiconductor device
FUJI ELECTRIC CO LTD1 citations51
US10128106B2Nov 13, 2018
Semiconductor device and manufacturing method of the semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US12294019B2May 6, 2025
Method for manufacturing nitride semiconductor device and nitride semiconductor device
FUJI ELECTRIC CO LTD0 citations49
US12237379B2Feb 25, 2025
Method for manufacturing nitride semiconductor device and nitride semiconductor device
FUJI ELECTRIC CO LTD0 citations49
US9905433B2Feb 27, 2018
Manufacturing method of semiconductor device including a nitride semiconductor layer
FUJI ELECTRIC CO LTD0 citations49
US10374031B2Aug 6, 2019
Semiconductor device and manufacturing method of semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10366891B2Jul 30, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41
NEC CORP
3 patentsUS11232180B2Jan 25, 2022
Face authentication system, face authentication method, biometrics authentication system, biometrics authentication method, and storage medium
NEC CORP0 citations62
US11232181B2Jan 25, 2022
Face authentication system, face authentication method, biometrics authentication system, biometrics authentication method, and storage medium
NEC CORP0 citations62
US10719595B2Jul 21, 2020
Face authentication system, face authentication method, biometrics authentication system, biometrics authentication method, and storage medium
NEC CORP0 citations51