Inventor

KIM HAERYONG

KR40 patents

⚠️ This page may combine multiple inventors who share the name “KIM HAERYONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM HAERYONG

SAMSUNG ELECTRONICS CO LTD

Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer

Semiconductor device including metal-2 dimensional material-semiconductor contact

Semiconductor device including metal-2 dimensional material-semiconductor contact

Semiconductor device including metal-2 dimensional material-semiconductor contact

Semiconductor device including metal-2 dimensional material-semiconductor contact

Electronics device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Method of manufacturing metal nitride film and electronic device including metal nitride film

Integrated circuit devices and methods of manufacturing the same

Avalanche photodetectors and image sensors including the same

Semiconductor device including metal-2 dimensional material-semiconductor contact

Integrated circuit device including capacitor with metal nitrate interfacial layer

Semiconductor device and method of manufacturing the same

Integrated circuit device and electronic device including capacitor with interfacial layer containing metal element, other element, nitrogen, and oxygen

Avalanche photodetectors and image sensors including the same

Capacitor structure and semiconductor device including the same

Method of manufacturing metal nitride film and electronic device including metal nitride film

Avalanche photodetectors and image sensors including the same

Broadband multi-purpose optical device and methods of manufacturing and operating the same

Film structure including hafnium oxide, electronic device including the same, and method of manufacturing the same

Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same

Photoelectric conversion element and optical sensor including the same

Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same

Semiconductor device with capping conductive layer on an electrode and method of fabricating the same

Semiconductor device and semiconductor apparatus including the same

Methods of forming material layer, semiconductor devices, and methods of manufacturing the same

Semiconductor device with capping conductive layer on an electrode and method of fabricating the same

Semiconductor device and method of manufacturing the same

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

Memristor and neuromorphic device comprising the same

Nonvolatile memory device and operating method of the same

Memristor and neuromorphic device comprising the same

Nonvolatile memory device and operating method of the same

Nonvolatile memory device including two-dimensional material and apparatus including the nonvolatile memory device

Broadband multi-purpose optical device and methods of manufacturing and operating the same

Photoelectric conversion element and optical sensor including the same

Electronic device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing

Semiconductor device and method of manufacturing the same

Integrated circuit device

LG ELECTRONICS INC

Digital device and method of processing data in said digital device