Inventor

OKADA DAVID N

US21 patents

⚠️ This page may combine multiple inventors who share the name “OKADA DAVID N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OKADA DAVID N

GREAT WALL SEMICONDUCTOR CORP

Lateral power semiconductor device for high frequency power conversion system, has isolation layer formed over substrate for reducing minority carrier storage in substrate

Bi-directional MOSFET power switch with single metal layer

Semiconductor device and method of forming a power MOSFET with interconnect structure to achieve lower RDSON

Device structure and methods of forming superjunction lateral power MOSFET with surrounding LDD

Chip-scale monolithic load switch for portable applications

Monolithic power semiconductor structures including pairs of integrated devices

Superjunction with surrounding lightly doped drain region

Radiation hardened lateral MOSFET structure

System and method to reduce metal series resistance of bumped chip

MOSFET with reduced resistance

Monolithic MOSFET and Schottky diode for mobile phone boost converter

MOTOROLA INC

High voltage transistor having reduced on-resistance

High voltage planar edge termination using a punch-through retarding implant

Method of fabricating a lateral semiconductor structure including field plates for self-alignment

SHEN ZHENG JOHN

Semiconductor device and method of forming junction enhanced trench power MOSFET

Semiconductor device and method of forming junction enhanced trench power MOSFET having gate structure embedded within trench

ANDERSON SAMUEL J

Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bump

Method of making a semiconductor device comprising a land grid array flip chip bump system with short bumps

HOLM KENNEDY JAMES W

Distributed channel-bipolar device

MASQUELIER MICHAEL P

Internal current limit and overvoltage protection method

SHEA PATRICK M

Semiconductor device and method of forming high voltage SOI lateral double diffused MOSFET with shallow trench insulator