Inventor
OH YONGCHUL
SG17 patents
⚠️ This page may combine multiple inventors who share the name “OH YONGCHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
5 patentsUS7394116B2Jul 1, 2008
Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD96 citations95
US8053316B2Nov 8, 2011
Method of fabricating vertical channel transistor
SAMSUNG ELECTRONICS CO LTD9 citations84
US8384141B2Feb 26, 2013
Semiconductor device with vertical channel transistor
SAMSUNG ELECTRONICS CO LTD2 citations62
US8372715B2Feb 12, 2013
Vertical channel transistors and methods for fabricating vertical channel transistors
SAMSUNG ELECTRONICS CO LTD2 citations62
US9449677B2Sep 20, 2016
Methods of operating and forming semiconductor devices including dual-gate electrode structures
SAMSUNG ELECTRONICS CO LTD2 citations61
XIA TAI XIN SEMICONDUCTOR QING DAO LTD
5 patentsUS11245019B2Feb 8, 2022
Semiconductor device and method for fabricating the same
XIA TAI XIN SEMICONDUCTOR QING DAO LTD0 citations60
US11158499B2Oct 26, 2021
Semiconductor component and method for fabricating the same
XIA TAI XIN SEMICONDUCTOR QING DAO LTD0 citations50
US11133227B2Sep 28, 2021
Semiconductor device having active region and method for fabricating the same
XIA TAI XIN SEMICONDUCTOR QING DAO LTD0 citations50
US11257710B2Feb 22, 2022
Method of fabricating semiconductor device
XIA TAI XIN SEMICONDUCTOR QING DAO LTD0 citations49
US11349034B2May 31, 2022
Protruding gate transistor and method of producing same
XIA TAI XIN SEMICONDUCTOR QING DAO LTD0 citations41