Inventor
MATSUKI HIROBUMI
JP6 patents
Patents
6 patentsUS6930355B2Aug 16, 2005
Silicided trench gate power mosfets ultrasonically bonded to a surface source electrode
TOSHIBA KK14 citations82
US6750511B2Jun 15, 2004
Trench-gate semiconductor device
TOSHIBA KK15 citations82
US6919249B2Jul 19, 2005
Semiconductor device and its manufacturing method comprising a trench gate
TOSHIBA KK4 citations61
US6992351B2Jan 31, 2006
Semiconductor device for power MOS transistor module
TOSHIBA KK4 citations57
US6940128B1Sep 6, 2005
Semiconductor device for power MOS transistor module
TOSHIBA KK6 citations57
US7400007B2Jul 15, 2008
Semiconductor device
TOSHIBA KK1 citations51