Inventor
WANG YANZHEN
CN10 patents
⚠️ This page may combine multiple inventors who share the name “WANG YANZHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
6 patentsUS10014296B1Jul 3, 2018
Fin-type field effect transistors with single-diffusion breaks and method
GLOBALFOUNDRIES INC19 citations85
US10074732B1Sep 11, 2018
Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages
GLOBALFOUNDRIES INC11 citations83
US10580857B2Mar 3, 2020
Method to form high performance fin profile for 12LP and above
GLOBALFOUNDRIES INC3 citations72
US10177151B1Jan 8, 2019
Single-diffusion break structure for fin-type field effect transistors
GLOBALFOUNDRIES INC6 citations72
US9748392B1Aug 29, 2017
Formation of work-function layers for gate electrode using a gas cluster ion beam
GLOBALFOUNDRIES INC4 citations70
US10153211B1Dec 11, 2018
Methods, apparatus, and system for fabricating finFET devices with increased breakdown voltage
GLOBALFOUNDRIES INC0 citations40