Inventor
CHOI BONG-HYUN
KR7 patents
Patents
7 patentsUS7112831B2Sep 26, 2006
Ternary content addressable memory cell
SAMSUNG ELECTRONICS CO LTD12 citations83
US11133267B2Sep 28, 2021
Semiconductor device including a peripheral circuit region and memory cell regions
SAMSUNG ELECTRONICS CO LTD2 citations71
US10685980B2Jun 16, 2020
Three-dimensional semiconductor memory device including a penetration region passing through a gate electrode
SAMSUNG ELECTRONICS CO LTD2 citations71
US11791287B2Oct 17, 2023
Semiconductor device including a cutting region having a height greater than a height of a channel structure
SAMSUNG ELECTRONICS CO LTD0 citations61
US10950704B2Mar 16, 2021
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD1 citations61
US9330931B2May 3, 2016
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US10930671B2Feb 23, 2021
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD0 citations50