Inventor
BRAND ADAM
US24 patents
⚠️ This page may combine multiple inventors who share the name “BRAND ADAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC
6 patentsUS11488823B2Nov 1, 2022
Techniques to engineer nanoscale patterned features using ions
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC4 citations84
US11043380B2Jun 22, 2021
Techniques to engineer nanoscale patterned features using ions
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC7 citations84
US10008384B2Jun 26, 2018
Techniques to engineer nanoscale patterned features using ions
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC6 citations84
US11908691B2Feb 20, 2024
Techniques to engineer nanoscale patterned features using ions
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC3 citations74
US10971368B2Apr 6, 2021
Techniques for processing substrates using directional reactive ion etching
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC3 citations72
US9934981B2Apr 3, 2018
Techniques for processing substrates using directional reactive ion etching
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC3 citations72
APPLIED MATERIALS INC
5 patentsUS9673277B2Jun 6, 2017
Methods and apparatus for forming horizontal gate all around device structures
APPLIED MATERIALS INC13 citations83
US10109534B2Oct 23, 2018
Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)
APPLIED MATERIALS INC5 citations73
US9378941B2Jun 28, 2016
Interface treatment of semiconductor surfaces with high density low energy plasma
APPLIED MATERIALS INC3 citations72
US8999829B2Apr 7, 2015
Dual gate process
APPLIED MATERIALS INC5 citations71
US8999821B2Apr 7, 2015
Fin formation by epitaxial deposition
APPLIED MATERIALS INC2 citations61
MAXIM INTEGRATED PRODUCTS
4 patentsUS10573744B1Feb 25, 2020
Self-aligned, dual-gate LDMOS transistors and associated methods
MAXIM INTEGRATED PRODUCTS6 citations71
US11699753B2Jul 11, 2023
LDMOS transistors including vertical gates with multiple dielectric sections, and associated methods
MAXIM INTEGRATED PRODUCTS0 citations60
US11316044B2Apr 26, 2022
LDMOS transistors including vertical gates with multiple dielectric sections, and associated methods
MAXIM INTEGRATED PRODUCTS0 citations60
US10622452B2Apr 14, 2020
Transistors with dual gate conductors, and associated methods
MAXIM INTEGRATED PRODUCTS0 citations39
INTEL CORP
3 patentsUS6172401B1Jan 9, 2001
Transistor device configurations for high voltage applications and improved device performance
INTEL CORP43 citations96
US6388475B1May 14, 2002
Voltage tolerant high drive pull-up driver for an I/O buffer
INTEL CORP31 citations92
US6287908B1Sep 11, 2001
Transistor device configurations for high voltage applications and improved device performance
INTEL CORP29 citations92