Inventor
TOYAMA TSUYOSHI
JP18 patents
⚠️ This page may combine multiple inventors who share the name “TOYAMA TSUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
16 patentsUS5262984ANov 16, 1993
Non-volatile memory device capable of storing multi-state data
MITSUBISHI ELECTRIC CORP185 citations99
US5021999AJun 4, 1991
Non-volatile semiconductor memory device with facility of storing tri-level data
MITSUBISHI ELECTRIC CORP392 citations98
US5172339ADec 15, 1992
Semiconductor memory device having error checking and correcting circuit and operating method therefor
MITSUBISHI ELECTRIC CORP101 citations96
US4779272AOct 18, 1988
Testable variable-threshold non-volatile semiconductor memory
MITSUBISHI ELECTRIC CORP106 citations94
US5182725AJan 26, 1993
Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method therefor
MITSUBISHI ELECTRIC CORP25 citations92
US4958352ASep 18, 1990
Semiconductor memory device with error check and correcting function
MITSUBISHI ELECTRIC CORP51 citations92
US4827452AMay 2, 1989
Semiconductor memory including a selectively disabled redunancy circuit
MITSUBISHI ELECTRIC CORP30 citations92
US5003205AMar 26, 1991
Buffer circuit used in a semiconductor device operating by different supply potentials and method of operating the same
MITSUBISHI ELECTRIC CORP42 citations91
US5262342ANov 16, 1993
Method of making a semiconductor memory device having error checking/correcting functions
MITSUBISHI ELECTRIC CORP19 citations74
US5195099AMar 16, 1993
Semiconductor memory device having improved error correcting circuit
MITSUBISHI ELECTRIC CORP19 citations74
US5107313AApr 21, 1992
Floating gate type semiconductor memory device
MITSUBISHI ELECTRIC CORP9 citations73
US5105386AApr 14, 1992
Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistors and operating method therefor
MITSUBISHI ELECTRIC CORP19 citations73
US4949305AAug 14, 1990
Erasable read-only semiconductor memory device
MITSUBISHI ELECTRIC CORP12 citations73
US5097152AMar 17, 1992
Buffer circuit used in a semiconductor device operating by different supply potentials and method of operating the same
MITSUBISHI ELECTRIC CORP16 citations72
US5058071AOct 15, 1991
Semiconductor memory device having means for repairing the memory device with respect to possible defective memory portions
MITSUBISHI ELECTRIC CORP18 citations72
US4651186AMar 17, 1987
Field effect transistor with improved withstand voltage characteristic
MITSUBISHI ELECTRIC CORP4 citations61