P

Inventor

TOYAMA TSUYOSHI

JP18 patents
⚠️ This page may combine multiple inventors who share the name “TOYAMA TSUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

16 patents
US5262984ANov 16, 1993

Non-volatile memory device capable of storing multi-state data

MITSUBISHI ELECTRIC CORP185 citations99
US5021999AJun 4, 1991

Non-volatile semiconductor memory device with facility of storing tri-level data

MITSUBISHI ELECTRIC CORP392 citations98
US5172339ADec 15, 1992

Semiconductor memory device having error checking and correcting circuit and operating method therefor

MITSUBISHI ELECTRIC CORP101 citations96
US4779272AOct 18, 1988

Testable variable-threshold non-volatile semiconductor memory

MITSUBISHI ELECTRIC CORP106 citations94
US5182725AJan 26, 1993

Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method therefor

MITSUBISHI ELECTRIC CORP25 citations92
US4958352ASep 18, 1990

Semiconductor memory device with error check and correcting function

MITSUBISHI ELECTRIC CORP51 citations92
US4827452AMay 2, 1989

Semiconductor memory including a selectively disabled redunancy circuit

MITSUBISHI ELECTRIC CORP30 citations92
US5003205AMar 26, 1991

Buffer circuit used in a semiconductor device operating by different supply potentials and method of operating the same

MITSUBISHI ELECTRIC CORP42 citations91
US5262342ANov 16, 1993

Method of making a semiconductor memory device having error checking/correcting functions

MITSUBISHI ELECTRIC CORP19 citations74
US5195099AMar 16, 1993

Semiconductor memory device having improved error correcting circuit

MITSUBISHI ELECTRIC CORP19 citations74
US5107313AApr 21, 1992

Floating gate type semiconductor memory device

MITSUBISHI ELECTRIC CORP9 citations73
US5105386AApr 14, 1992

Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistors and operating method therefor

MITSUBISHI ELECTRIC CORP19 citations73
US4949305AAug 14, 1990

Erasable read-only semiconductor memory device

MITSUBISHI ELECTRIC CORP12 citations73
US5097152AMar 17, 1992

Buffer circuit used in a semiconductor device operating by different supply potentials and method of operating the same

MITSUBISHI ELECTRIC CORP16 citations72
US5058071AOct 15, 1991

Semiconductor memory device having means for repairing the memory device with respect to possible defective memory portions

MITSUBISHI ELECTRIC CORP18 citations72
US4651186AMar 17, 1987

Field effect transistor with improved withstand voltage characteristic

MITSUBISHI ELECTRIC CORP4 citations61

TOYOTA MOTOR CO LTD

2 patents