Inventor
KOHDA KENJI
JP16 patents
Patents
16 patentsUS5021999AJun 4, 1991
Non-volatile semiconductor memory device with facility of storing tri-level data
MITSUBISHI ELECTRIC CORP392 citations98
US5450424ASep 12, 1995
Semiconductor memory device with error checking and correcting function
MITSUBISHI ELECTRIC CORP141 citations96
US5600171AFeb 4, 1997
Mask ROM device
MITSUBISHI ELECTRIC CORP70 citations95
US4779272AOct 18, 1988
Testable variable-threshold non-volatile semiconductor memory
MITSUBISHI ELECTRIC CORP106 citations94
US5383205AJan 17, 1995
Semiconductor memory device having an error correction circuit and an error correction method of data in a semiconductor memory device
MITSUBISHI ELECTRIC CORP21 citations92
US5243573ASep 7, 1993
Sense amplifier for nonvolatile semiconductor storage devices
MITSUBISHI ELECTRIC CORP35 citations92
US5182725AJan 26, 1993
Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method therefor
MITSUBISHI ELECTRIC CORP25 citations92
US4958352ASep 18, 1990
Semiconductor memory device with error check and correcting function
MITSUBISHI ELECTRIC CORP51 citations92
US4827452AMay 2, 1989
Semiconductor memory including a selectively disabled redunancy circuit
MITSUBISHI ELECTRIC CORP30 citations92
US5467457ANov 14, 1995
Read only type semiconductor memory device including address coincidence detecting circuits assigned to specific address regions and method of operating the same
MITSUBISHI ELECTRIC CORP24 citations91
US5003205AMar 26, 1991
Buffer circuit used in a semiconductor device operating by different supply potentials and method of operating the same
MITSUBISHI ELECTRIC CORP42 citations91
US5107313AApr 21, 1992
Floating gate type semiconductor memory device
MITSUBISHI ELECTRIC CORP9 citations73
US5105386AApr 14, 1992
Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistors and operating method therefor
MITSUBISHI ELECTRIC CORP19 citations73
US4949305AAug 14, 1990
Erasable read-only semiconductor memory device
MITSUBISHI ELECTRIC CORP12 citations73
US5097152AMar 17, 1992
Buffer circuit used in a semiconductor device operating by different supply potentials and method of operating the same
MITSUBISHI ELECTRIC CORP16 citations72
US5058071AOct 15, 1991
Semiconductor memory device having means for repairing the memory device with respect to possible defective memory portions
MITSUBISHI ELECTRIC CORP18 citations72