Inventor
ANDOH NOBUAKI
JP6 patents
Patents
6 patentsUS5182725AJan 26, 1993
Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method therefor
MITSUBISHI ELECTRIC CORP25 citations92
US4958352ASep 18, 1990
Semiconductor memory device with error check and correcting function
MITSUBISHI ELECTRIC CORP51 citations92
US5111257AMay 5, 1992
Electronic integrated circuit having an electrode layer for element isolation
MITSUBISHI ELECTRIC CORP34 citations91
US5107313AApr 21, 1992
Floating gate type semiconductor memory device
MITSUBISHI ELECTRIC CORP9 citations73
US5105386AApr 14, 1992
Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistors and operating method therefor
MITSUBISHI ELECTRIC CORP19 citations73
US4949305AAug 14, 1990
Erasable read-only semiconductor memory device
MITSUBISHI ELECTRIC CORP12 citations73