Inventor
HUANG WEN-SHEH
TW32 patents
⚠️ This page may combine multiple inventors who share the name “HUANG WEN-SHEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS11217482B2Jan 4, 2022
Method for forming semiconductor device with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10515852B2Dec 24, 2019
Structure and formation method of semiconductor device with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11404369B2Aug 2, 2022
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10985011B2Apr 20, 2021
Structure and formation method of semiconductor device with resistive elements
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10304772B2May 28, 2019
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11942390B2Mar 26, 2024
Thermal dissipation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11798848B2Oct 24, 2023
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11355410B2Jun 7, 2022
Thermal dissipation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12347770B2Jul 1, 2025
One-time-programmable device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12543566B2Feb 3, 2026
Semiconductor devices and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12451401B2Oct 21, 2025
Thermal dissipation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12165947B2Dec 10, 2024
Semiconductor devices and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119262B2Oct 15, 2024
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040178B2Jul 16, 2024
Method for manufacturing semiconductor structure with resistive elements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901289B2Feb 13, 2024
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670501B2Jun 6, 2023
Semiconductor device structure with resistive elements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12159830B2Dec 3, 2024
Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11923295B2Mar 5, 2024
Interconnect level with high resistance layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12575409B2Mar 10, 2026
Interconnect level with high resistance layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12074107B2Aug 27, 2024
Structure and method of forming a semiconductor device with resistive elements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12068377B2Aug 20, 2024
Back-end-of-line devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11799001B2Oct 24, 2023
Back-end-of-line devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US11437313B2Sep 6, 2022
Structure and method of forming a semiconductor device with resistive elements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10164002B2Dec 25, 2018
Semiconductor device and layout method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US11532548B2Dec 20, 2022
Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12417955B2Sep 16, 2025
Thermal sensor device by back end of line metal resistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49