Inventor

DROWLEY Clifford

US29 patents

⚠️ This page may combine multiple inventors who share the name “DROWLEY Clifford”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DROWLEY Clifford

SEMICONDUCTOR COMPONENTS IND LLC

Method and system for fin-based voltage clamp

Negative charge extraction structure for edge termination

Method and system for etch depth control in III-V semiconductor devices

Methods and systems to improve uniformity in power FET arrays

Method and system for fabrication of a vertical fin-based field effect transistor

Method of fabricating super-junction based vertical gallium nitride JFET and MOSFET power devices

Self-aligned isolation for self-aligned contacts for vertical FETS

Regrowth uniformity in GaN vertical devices

Fabrication method for JFET with implant isolation

Method and system for fabricating fiducials using selective area growth

Vertical fin-based field effect transistor (FinFET) with neutralized fin tips

Method and system for control of sidewall orientation in vertical gallium nitride field effect transistors

Method and system for fabricating regrown fiducials for semiconductor devices

Vertical fin-based field effect transistor (FinFET) with connected fin tips

Coupled guard rings for edge termination

Method and system for routing of electrical conductors over neutralized power FETS

Method and system of junction termination extension in high voltage semiconductor devices

Method and system for fabricating fiducials for processing of semiconductor devices

NEXGEN POWER SYSTEMS INC

Method and system for fabricating fiducials using selective area growth

Fabrication method for JFET with implant isolation

JFET with implant isolation

Super-junction based vertical gallium nitride JFET power devices

Method and system for fabrication of a vertical fin-based field effect transistor

Method and system for etch depth control in III-V semiconductor devices

Method of fabricating super-junction based vertical gallium nitride JFET and MOSFET power devices

Regrowth uniformity in GaN vertical devices

Method and system for fabrication of a vertical fin-based field effect transistor

Method and system for fabricating fiducials using selective area growth

Method for regrown source contacts for vertical gallium nitride based FETS