Inventor
PARK GYU-HEE
KR18 patents
Patents
18 patentsUS9391089B2Jul 12, 2016
Method of manufacturing semiconductor device including nickel-containing film
SAMSUNG ELECTRONICS CO LTD4 citations73
US9637511B2May 2, 2017
Method of forming thin film using a heterostructured nickel compound
SAMSUNG ELECTRONICS CO LTD4 citations72
US10913754B2Feb 9, 2021
Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound
SAMSUNG ELECTRONICS CO LTD2 citations71
US9923047B2Mar 20, 2018
Method for manufacturing a capacitor for semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations71
US10224200B2Mar 5, 2019
Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device
SAMSUNG ELECTRONICS CO LTD2 citations70
US10259836B2Apr 16, 2019
Methods of forming thin film and fabricating integrated circuit device using niobium compound
SAMSUNG ELECTRONICS CO LTD3 citations67
US10242877B2Mar 26, 2019
Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11524973B2Dec 13, 2022
Metal compounds and methods of fabricating semiconductor devices using the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11081389B2Aug 3, 2021
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US10468264B2Nov 5, 2019
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US11901191B2Feb 13, 2024
Atomic layer etching method and semiconductor device manufacturing method using the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US10847362B2Nov 24, 2020
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations56
US10752645B2Aug 25, 2020
Method of forming a thin film
SAMSUNG ELECTRONICS CO LTD0 citations51
US10600643B2Mar 24, 2020
Method of forming thin film and method of manufacturing integrated circuit device using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10329312B2Jun 25, 2019
Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations51
US9790246B2Oct 17, 2017
Nickel compound and method of forming thin film using the nickel compound
SAMSUNG ELECTRONICS CO LTD0 citations51
US11332486B2May 17, 2022
Aluminum compound and method for manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US12051586B2Jul 30, 2024
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations46