Inventor
CHO YOUNJOUNG
KR21 patents
⚠️ This page may combine multiple inventors who share the name “CHO YOUNJOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS11081338B2Aug 3, 2021
Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations70
US10134583B2Nov 20, 2018
Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD3 citations70
US9899392B2Feb 20, 2018
Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD2 citations66
US11524973B2Dec 13, 2022
Metal compounds and methods of fabricating semiconductor devices using the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11081389B2Aug 3, 2021
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12398166B2Aug 26, 2025
Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound
SAMSUNG ELECTRONICS CO LTD0 citations60
US12378272B2Aug 5, 2025
Yttrium compound and method of manufacturing integrated circuit device by using the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11728160B2Aug 15, 2023
Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11466043B2Oct 11, 2022
Niobium compound and method of forming thin film
SAMSUNG ELECTRONICS CO LTD0 citations59
US11746121B2Sep 5, 2023
Molybdenum compound and method of manufacturing integrated circuit device using the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US11254698B2Feb 22, 2022
Cobalt precursor and methods for manufacture using the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US12473309B2Nov 18, 2025
Organometallic compound and method of manufacturing integrated circuit using the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US12410203B2Sep 9, 2025
Organometallic adduct compound and method of manufacturing integrated circuit using the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US10847362B2Nov 24, 2020
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations56
US12593628B2Mar 31, 2026
Silicon precursor having a heterocyclic group, composition for depositing a silicon-containing layer comprising the same and method of depositing a silicon-containing layer using the same
SAMSUNG ELECTRONICS CO LTD0 citations54
US11332486B2May 17, 2022
Aluminum compound and method for manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US12051586B2Jul 30, 2024
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations46
US10883173B2Jan 5, 2021
Gas storage cylinder, deposition system, and method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations45
US12546001B2Feb 10, 2026
Composition for depositing a silicon-containing layer and method of depositing a silicon-containing layer using the same
SAMSUNG ELECTRONICS CO LTD0 citations43