P

Inventor

LO CHUN-YUAN

TW19 patents
⚠️ This page may combine multiple inventors who share the name “LO CHUN-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EMEMORY TECHNOLOGY INC

14 patents
US9653173B1May 16, 2017

Memory cell with different program and read paths for achieving high endurance

EMEMORY TECHNOLOGY INC4 citations84
US11164880B2Nov 2, 2021

Multi-time programming non-volatile memory

EMEMORY TECHNOLOGY INC3 citations73
US11929434B2Mar 12, 2024

High voltage switch device

EMEMORY TECHNOLOGY INC0 citations62
US11398259B2Jul 26, 2022

Memory cell array of multi-time programmable non-volatile memory

EMEMORY TECHNOLOGY INC1 citations62
US11335805B2May 17, 2022

High voltage switch device

EMEMORY TECHNOLOGY INC0 citations62
US9953685B2Apr 24, 2018

Semiconductor device and method for fabricating the same

EMEMORY TECHNOLOGY INC1 citations61
US11980026B2May 7, 2024

Magnetoresistive random access memory for physically unclonable function technology and associated random code generating method

EMEMORY TECHNOLOGY INC1 citations60
US12294367B2May 6, 2025

Level shifter with voltage stress durability and method for driving the same

EMEMORY TECHNOLOGY INC0 citations59
US12255645B2Mar 18, 2025

Programming method of non-volatile memory cell

EMEMORY TECHNOLOGY INC0 citations59
US9792993B2Oct 17, 2017

Memory cell with high endurance for multiple program operations

EMEMORY TECHNOLOGY INC0 citations51
US9424939B2Aug 23, 2016

Non-volatile memory apparatus and erasing method thereof

EMEMORY TECHNOLOGY INC0 citations51
US9196367B2Nov 24, 2015

Non-volatile memory apparatus and erasing method thereof

EMEMORY TECHNOLOGY INC0 citations51
US10181342B2Jan 15, 2019

Method for improving a program speed and an erase speed of a memory

EMEMORY TECHNOLOGY INC0 citations50
US9484094B2Nov 1, 2016

Control method of resistive random-access memory

EMEMORY TECHNOLOGY INC0 citations41

LO CHUN-YUAN

4 patents

MACRONIX INT CO LTD

1 patent