Inventor
YANG SUNG-HSIN
TW19 patents
Patents
19 patentsUS12119265B2Oct 15, 2024
High voltage devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11699702B2Jul 11, 2023
Input/output devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12283595B2Apr 22, 2025
Integration of multiple transistors having fin and mesa structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12224213B2Feb 11, 2025
High voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12588223B2Mar 24, 2026
FinFET MOS capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12568676B2Mar 3, 2026
High voltage devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520571B2Jan 6, 2026
Semiconductor structure including 3D capacitor and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12477841B2Nov 18, 2025
Semiconductor image-sensing structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199193B2Jan 14, 2025
FinFET MOS capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094874B2Sep 17, 2024
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855175B2Dec 26, 2023
Fabrication of long gate devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469335B2Oct 11, 2022
FinFET MOS capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444175B2Sep 13, 2022
Fabrication of long gate devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342553B2Jun 24, 2025
Semiconductor devices and methods for increased capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12336199B2Jun 17, 2025
Semiconductor devices and methods for increased capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12538558B2Jan 27, 2026
Source/drain epitaxial structures for high voltage transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12218134B2Feb 4, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12176347B2Dec 24, 2024
Input/output devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12543334B2Feb 3, 2026
FinFET with long channel length structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47